Resistively switching memory
AssigneeInfineon Technologies AG
InventorsKlaus Dieter Ufert, Cay-Uwe Pinnow
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Abstract
The present invention relates to a reproducible conditioning during the manufacturing of a resistively switching CBRAM memory cell comprising a first electrode and a second electrode with an active material positioned therebetween. The active material is adapted to be placed in a more or less electroconductive state by means of electrochemical switching processes. A CBRAM memory cell manufactured pursuant to the method according to the invention has, due to the improved conditioning, more reliable and more distinctly evaluable electrical switching properties. Moreover, no more forming step is necessary with the method according to the present invention.
Claims22
A method for manufacturing a resistively switching memory cell, comprising a first electrode and a second electrode with an active material positioned therebetween, the active material being adapted to be placed in a substantially electroconductive state by means of electrochemical switching processes, comprising:
- doping the active material in a doping process by diffusing a mobile material into the active material from the first electrode in a direction to the second electrode to build a doped region;
- and
- performing a retraction process by at least partial retraction of the mobile material diffused into the active material from a region close to the second electrode to generate or modify a doping profile between the doped region and an undoped region, wherein performing the retraction process comprises applying an electric charge to the electrodes by contact with a high frequency inert gas plasma.
A method for manufacturing a resistively switching memory cell, comprising a first electrode and a second electrode with an active material positioned therebetween, the active material being adapted to be placed in a substantially electroconductive state by means of electrochemical switching processes, comprising:
- doping the active material in a doping process by diffusing a mobile material into the active material from the first electrode in a direction to the second electrode to build a doped region;
- and
- performing a retraction process by at least partial retraction of the mobile material diffused into the active material from a region close to the second electrode to generate or modify a doping profile between the doped region and an undoped region, wherein performing the retraction process comprises applying an electric charge to the electrodes by inert gas ion beams.
Dependencies are inferred from the claim text.