Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films

A method of manufacturing a metal-insulator-metal (MIM) capacitor comprising:

• forming a plurality of lower electrodes on a semiconductor substrate;
• loading a plurality of semiconductor substrates having the lower electrodes formed in a first batch type apparatus and forming first dielectric films using atomic layer deposition;
• loading a plurality of semiconductor substrates having the first dielectric films formed in a second batch type apparatus and forming second dielectric films on the first dielectric films using atomic layer deposition, wherein the second dielectric films have a higher crystallization temperature than the first dielectric films;
• loading a plurality of semiconductor substrates having the second dielectric films formed in a third batch type apparatus and forming third dielectric films on the second dielectric films using the atomic layer deposition;
• and
• forming upper electrodes on the third dielectric films.

A method of manufacturing a dielectric film comprising:

• forming a plurality of first dielectric films on a plurality of wafers with at least one repetition of supplying a first reaction source to a reaction space and purging and pumping the first reaction source from the reaction space, and further supplying a second reaction source to the reaction space and, purging and pumping the second reaction source from the reaction space;
• forming a plurality of second dielectric films on the plurality of wafers on each of which a first dielectric film is formed with at least one repetition of supplying a third reaction source to a reaction space and purging and pumping the third reaction source from the reaction space, and further supplying a fourth reaction source to the reaction space and purging and pumping the fourth reaction source from the reaction space;
• and
• forming a plurality of third dielectric films on the plurality of wafers on each of which a second dielectric film is formed simultaneously with at least one repetition of supplying a fifth reaction source to a reaction space and purging and pumping the fifth reaction source from the reaction space, and further supplying a sixth reaction source to the reaction space and purging and pumping the sixth reaction source from the reaction space,
• wherein the first dielectric films and the second dielectric films are formed in different chambers.

A method of manufacturing a dielectric film comprising:

• forming a plurality of hafnium oxide layers on a plurality of wafers at a first temperature with at least one repetition of supplying a hafnium source to a reaction space and purging and pumping the hafnium source from the reaction space, and further supplying an oxygen source to the reaction space and purging and pumping the oxygen source from the reaction space;
• forming a plurality of aluminum oxide layers on the plurality of wafers on each of which a hafnium oxide layer is formed at a second temperature, which is higher than the first temperature with at least one repetition of supplying an aluminum source to a reaction space and purging and pumping the aluminum source from the reaction space, and further supplying an oxygen source to the reaction space and purging and pumping the oxygen source from the reaction space;
• and
• forming a plurality of hafnium oxide layers on the plurality of wafers on each of which an aluminum oxide layer is formed simultaneously at the first temperature with at least one repetition of supplying a hafnium source to a reaction space and purging and pumping the hafnium source from the reaction space, and further supplying an oxygen source to the reaction space and purging, and pumping the oxygen source from the reaction space,
• wherein the first dielectric films and the second dielectric films are formed in the different chambers.