Silicon/germanium superlattice thermal sensor
AssigneeSharp Laboratories of America, Inc.
InventorsJer-Shen Maa, Jinke Tang, Jong-Jan Lee, Douglas J. Tweet, Sheng Teng Hsu
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Abstract
A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first substrate is bonded to the second substrate, forming a bonded substrate. An electrical connection is formed between the SiGe superlattice structure and the CMOS device, and a cavity is formed between the SiGe superlattice structure and the bonded substrate.
Claims9
A method for fabricating a silicon/germanium (SiGe) superlattice thermal sensor, the method comprising:
- forming an active complimentary metal oxide semiconductor (CMOS) device in a first Si substrate as follows:
- forming a CMOS device with an electrode overlying a Si substrate;
- forming a first oxide layer overlying the electrode;
- forming a first nitride layer overlying the first oxide layer;
- and
- forming a second oxide layer overlying the first nitride layer;
- forming a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate;
- bonding the first substrate to the second substrate, forming a bonded substrate;
- forming an electrical connection between the SiGe superlattice structure and the CMOS device;
- and,
- forming a cavity between the SiGe superlattice structure and the bonded substrate.
Dependencies are inferred from the claim text.