Systems and methods that selectively modify liner induced stress
AssigneeTexas Instruments Incorporated
InventorsTing Y. Tsui, Satyavolu S. Papa Rao, Haowen Bu, Robert Kraft
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Abstract
The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively apply strain to multiple regions of a semiconductor device. A semiconductor device having one or more regions is provided (102). A strain inducing liner is formed over the semiconductor device (104). A selection mechanism, such as a layer of photoresist or UV reflective coating is applied to the semiconductor device to select a region (106). The selected region is treated with a stress altering treatment that alters a type and/or magnitude of stress produced by the selected region (108).
Claims18
A method of selectively modifying liner stress comprising:
- providing a semiconductor device having one or more regions;
- forming a strain inducing liner over the semiconductor device;
- applying a selection mechanism to select a region;
- and
- after forming the strain inducing liner, treating a portion of the strain inducing liner within the selected region to alter a type of stress induced by the strain inducing liner within the selected region.
A method of fabricating a semiconductor device comprising:
- selecting a first stress type and a first stress magnitude for a first region of the semiconductor device;
- selecting a second stress type and a second stress magnitude for a second region of the semiconductor device;
- forming a strain inducing liner over the semiconductor device according to the first stress type and the first stress magnitude;
- and
- after forming the strain inducing liner, treating the strain inducing liner within the second region according to the second stress type and the second stress magnitude.
A method of selectively modifying liner stress comprising:
- providing a semiconductor device having at least first and second regions;
- forming a liner over at least the first and second regions of the semiconductor device, wherein the liner comprises a first portion over at least the first region of the semiconductor device and a second portion over at least the second portion of the semiconductor device;
- and
- treating the first portion of the liner to alter a type of stress induced by the first portion of the liner to the first region of the semiconductor device and leaving the second portion of the liner untreated such that a type of stress induced by the second portion of the liner to the second region is not altered.
Dependencies are inferred from the claim text.