Methods of manufacturing fin type field effect transistors

A method of manufacturing a fin type field effect transistor, the method comprising:

• forming a first hard mask layer pattern on a substrate comprising a semiconductor material;
• partially etching the substrate using the first hard mask layer pattern as an etching mask to form an active fin extending in a direction away from a major surface of the substrate, wherein the active fin comprises a semiconductor material;
• forming a gate insulation layer pattern on a sidewall portion of the active fin;
• forming a first conductive layer pattern comprising a metal silicide on surfaces of the substrate and the gate insulation layer pattern, and on a sidewall of the first hard mask layer pattern;
• forming a first dummy layer pattern on the first conductive layer pattern, the first dummy layer pattern having a first etching selectivity with respect to the first conductive layer pattern;
• forming a second dummy layer pattern on the first dummy layer pattern, the second dummy layer pattern having a second etching selectivity with respect to the first conductive layer pattern;
• and
• forming source/drain regions in the active fin on opposite sides of the first conductive layer pattern.