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US 7,442,592 B2Granted
Manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMitsuhiro Ichijo, Taketomi Asami, Noriyoshi Suzuki
Life of this patent
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Abstract
A technique of reducing fluctuation between elements is provided in which a semiconductor film having a crystal structure is obtained by using a metal element that accelerates crystallization of a semiconductor film and then the metal element remaining in the film is removed effectively. A barrier layer is formed on a semiconductor film having a crystal structure by plasma CVD from monosilane and nitrous oxide as material gas. In a step of forming a gettering site, a semiconductor film having an amorphous structure and containing a high concentration of noble gas element, specifically, 1×1020 to 1×1021/cm3, is formed by plasma CVD. The film is typically an amorphous silicon film. Then gettering is conducted.
Claims26
A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
- providing the first semiconductor film with a material comprising a metal element;
- heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
- irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
- removing an oxide from the crystallized first semiconductor film after the irradiation of the laser;
- forming a barrier layer on the crystallized first semiconductor film;
- forming a second semiconductor film on the barrier layer;
- removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
- removing the second semiconductor film;
- and
- removing the barrier layer.
8 more elements
A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
- providing the first semiconductor film with a material comprising a metal element;
- heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
- irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
- forming a barrier layer on the crystallized first semiconductor film;
- forming a second semiconductor film containing a noble gas element on the barrier layer;
- removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
- removing the second semiconductor film;
- and
- removing the barrier layer.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
- providing the first semiconductor film with a material comprising a metal element;
- heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
- irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
- forming a barrier layer on the crystallized first semiconductor film;
- forming a second semiconductor film containing argon at a concentration of 1×1018/cm3 to 1×1022/cm3 on the barrier layer;
- removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
- removing the second semiconductor film;
- and
- removing the barrier layer.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
- providing the first semiconductor film with a material comprising a metal element;
- heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
- irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
- removing an oxide from the crystallized first semiconductor film after the irradiation of the laser;
- forming a barrier layer on the crystallized first semiconductor film;
- forming a second semiconductor film on the barrier layer without exposing the barrier layer to the air;
- removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
- removing the second semiconductor film;
- and
- removing the barrier layer.
8 more elements
A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
- providing the first semiconductor film with a material comprising a metal element;
- heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
- irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
- forming a barrier layer on the crystallized first semiconductor film;
- forming a second semiconductor film containing a noble gas element on the barrier layer without exposing the barrier layer to the air;
- removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
- removing the second semiconductor film;
- and
- removing the barrier layer.
7 more elements
A method of manufacturing a semiconductor device, comprising:
- forming on an insulating surface a first semiconductor film having an amorphous structure;
- providing the first semiconductor film with a material comprising a metal element;
- heating the first semiconductor film to crystallize the first semiconductor film after providing said material;
- irradiating the crystallized first semiconductor film with laser in an oxidizing atmosphere;
- forming a barrier layer on the crystallized first semiconductor film;
- forming a second semiconductor film containing argon at a concentration of 1×1018/cm3 to 1×1022/cm3 on the barrier layer without exposing the barrier layer to the air;
- removing at least a portion of the metal element from the crystallized first semiconductor film by gettering the metal element into the second semiconductor film;
- removing the second semiconductor film;
- and
- removing the barrier layer.
7 more elements
Dependencies are inferred from the claim text.