Vertical GaN-based LED and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsJae Hoon Lee, Hee Seok Choi, Jeong Tak Oh, Su Yeol Lee
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Abstract
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
Claims6
A method of manufacturing a vertical GaN-based LED, the method comprising:
- forming a GaN-based buffer layer on a sapphire substrate;
- forming an undoped GaN layer on the GaN-based buffer layer to obtain crystallinity;
- forming an AlGaN layer on the undoped GaN layer;
- forming an undoped GaN layer on the AlGaN layer so as to form a 2DEG layer at a junction interface of the AlGaN layer;
- sequentially forming an n-type GaN layer, an active layer, and a p-type GaN layer on the undoped GaN layer to form a GaN-based LED structure;
- forming a p-electrode on the GaN-based LED structure;
- attaching a conductive substrate onto the p-electrode;
- removing the sapphire substrate and the GaN-based buffer layer through a laser lift-off (LLO) process, and removing the undoped GaN layer from the AlGaN layer through a chemical mechanical polishing (CMP) process;
- and
- forming an n-electrode on the AlGaN layer from which the undoped GaN layer has been removed.
Dependencies are inferred from the claim text.