Photoresist composition and method of forming a photoresist pattern using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsBoo-Deuk Kim, Jin-A Ryu, Jae-Ho Kim, Young-Ho Kim, Kyoung-Mi Kim
Life of this patent
Estimating the term…
Abstract
In a photoresist composition for a semiconductor manufacturing process and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes an organic dispersing agent for dispersing acid (H+). The photoresist film may have enough spaces among photosensitive polymers so that acid may be dispersed sufficiently in an exposure process. Thus, a photoresist pattern may be easily formed in a defocus region. Defects in a semiconductor device may be reduced and a productivity of the semiconductor manufacturing process may be enhanced.
Claims16
A photoresist composition comprising an organic dispersing agent including an olefin compound having at least one carbon-carbon double bond for dispersing acid (H+), the organic dispersing agent further including (E)-dec-5-ene or dec-1-ene.
A photoresist composition comprising:
- a photosensitive polymer;
- a photosensitive material;
- an organic dispersing agent including an olefin compound having at least one carbon-carbon double bond for dispersing acid (H+), the organic dispersing agent further including (E)-dec-5-ene or dec-1-ene;
- and
- an organic solvent.
A method of forming a photoresist pattern comprising:
- forming a photoresist film on an object by coating thereon a photoresist composition including an organic dispersing agent including an olefin compound having at least one carbon-carbon double bond for dispersing acid (H+), the organic dispersing agent further including (E)-dec-5-ene or dec-1-ene;
- exposing the photoresist film to a light passing through a mask having a predetermined pattern;
- and
- removing an exposed portion of the photoresist film to form the photoresist pattern on the object.
Dependencies are inferred from the claim text.