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US 7,442,450 B2Granted
Yttria sintered body, electrostatic chuck, and manufacturing method of yttria sintered body
AssigneeNGK Insulators, Ltd.
InventorsYasufumi Aihara, Hiroto Matsuda
Life of this patent
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Abstract
A yttria sintered body contains an amount of silicon carbide within a range of 5 to 40% by volume, has a volume resistivity at room temperature within a range of 1×101 to 1×1017 Ω·cm, and is adapted for application to an electrostatic chuck.
Claims8
An electrostatic chuck adapted to make use of a Johnsen-Rahbek force, comprising:
- a base body;
- an electrode formed on the base body;
- and
- a dielectric layer formed on the electrode, and made by an yttria sintered body containing an amount of silicon carbide within a range of 10 to 30% by volume, and having a volume resistivity at room temperature within a range of 1×108 to 1×1013 Ω·cm.
1 more element
A manufacturing method for forming an electrostatic chuck of a yttria sintered body adapted to make use of a Johnsen-Rahbek force comprising the steps of:
- preparing raw material powder containing an amount of silicon carbide within a range of 5 to 40% by volume, and yttria;
- forming a base body using the raw material powder;
- forming an electrode on the base body;
- forming a dielectric layer on the electrode and the base body;
- and
- sintering in an inert gas atmosphere within a temperature range of 1500 to 2000° C. the base body, the electrode and the dielectric layer to form the electrostatic chuck,
- wherein the dielectric layer comprises yttria and silicon carbide within a range of 10% to 30% by volume and has a volume resistivity at room temperature within a range of 1×108 to 1×1013Ω·cm.
4 more elements
Dependencies are inferred from the claim text.