US 7,442,407 B2Granted

Tantalum and niobium compounds and their use for chemical vapour deposition (CVD)

AssigneeH.C. Starck GmbH

InventorsKnud Reuter, Jörg Sundermeyer, Alexei Merkoulov, Wolfgang Stolz, Kerstin Volz, Michael Pokoj, Thomas Ochs

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Abstract

Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described: wherein M stands for Nb or Ta, R1 and R2 C1 to C12 alkyl, C5 to C12 cycloalkyl, C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2 R3 is C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3 or NR2, R4 denotes Cl, Br, I, NIH—R5 where R5 is C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical, or O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl, C6 to C10 aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR′R″ (hydrazido(-1), wherein R, R′ and R″ have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, and R7 and R8 are H, C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

Claims13

Dependent claims

A compound of the formula (I)

wherein
M stands for Ta or Nb,
R1 and R2 mutually independently denote optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl or triorganosilyl radicals —SiR3, or amino radicals NR2 wherein R stands for a C1 to C4 alkyl radical,
R3 denotes an optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl, C6 to C14 aryl radical, or SiR3, or NR2 wherein R has the aforementioned meaning,
R4 denotes (a) halogen selected from the group consisting of Cl, Br, and I,
(b) NH—R5 where R5=optionally substituted C1 to C8 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical,
(c) O—R6 where R6=optionally substituted C1 to C11 alkyl, C5 to C10 cycloalkyl or C6 to C10 aryl radical,
(d) —SiR3,
(e) BH4,
(f) an optionally substituted allyl radical,
(g) an indenyl radical,
(h) optionally substituted benzyl radical,
(i) an optionally substituted cyclopentadienyl radical,
(j) —NR—NR′R″ (hydrazido(−1), wherein R, R′ and R″ mutually independently have the aforementioned meaning of R,
(k) CH2SiMe3,
(l) pseudohalide, or
(m) silylamide —N(SiMe3)2,
R7 and R8 mutually independently denote H, optionally substituted C1 to C12 alkyl, C5 to C12 cycloalkyl or C6 to C10 aryl radicals.

15 more elements

Dependencies are inferred from the claim text.

Facts

Application: 11/482,397Filed 7 Jul 2006
Priority: DE 10 2005 033 10215 Jul 2005
Published: US 2007/0042213 A122 Feb 2007
Granted: 28 Oct 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

C07F 9/005
Compounds containing elements of Groups 5 or 15 of the Periodic Table: compounds of elements of Group 5 of the Periodic Table without metal-carbon…
C23C 16/34
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides: nitrides
Y10T 428/12528
Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]: semiconductor component
C07F
Acyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen