Apparatus for manufacturing semiconductor device

An apparatus for manufacturing a semiconductor device using plasma, comprising:

• a chamber having a plasma generating region and a plasma processing region adapted to perform a manufacturing process on the semiconductor device under a plasma atmosphere,
• a plasma generating means adjacent the plasma generating region;
• and
• a plasma concentrating means adapted to reduce a size of the plasma processing region near the semiconductor device to be processed compared to a size of the plasma generating region, the plasma concentrating means including:
• an electrode having a first length on which the semiconductor device to be processed is positioned,
• an insulating plate having a second length longer than the first length and facing the electrode, and
• a confinement layer contacting an edge of the insulating plate, forming an acute angle to a virtual plane connecting opposing ends of the insulating plate, and extending toward an edge of the electrode,
• wherein the insulating plate has a dome shape having a predetermined radius of curvature, and the second length of the insulating plate being approximately the same as a projected diameter of the insulating plate.

An apparatus for manufacturing a semiconductor device using plasma, comprising:

• chamber having a plasma generating region and a plasma processing region adapted to perform a manufacturing process on the semiconductor device under a plasma atmosphere;
• a plasma generating means adjacent to the plasma generating region;
• and
• a plasma concentrating means adapted to reduce a size of the plasma processing region near the semiconductor device to be processed compared to a size of the plasma generating region, the plasma concentrating means including:
• an electrode having a first length;
• an insulating plate having a dome shape, and including a first part having a first radius of curvature and a second part having a second radius of curvature, which is smaller than the first radius of curvature, both of the first part and the second part face the plasma generating region;
• and
• a confinement layer connected to the second part of the insulating plate and extending toward the electrode,
• wherein a projected diameter of the second part of the insulating plate over the electrode is smaller than a projected diameter of the first part of the insulating plate, and equal to or larger than the first length of the electrode.