Method for producing single crystal of multi-element oxide single crystal containing bismuth as constituting element

Abstract

The present invention provides methods for producing a multi-element oxide single crystal which contains Bi, which has high crystallinity independently of a preparation process, and which is represented by the formula (Bi2O2)Am−1BmO3m+1, wherein A is Sr, Ba, Ca, or Bi and B is Ti, Ta, or Nb. A flux layer, containing a composition satisfying the inequality 0<CuO/Bi2O3<2 and/or 0≦TiO/Bi2O3<7/6 on a molar basis is deposited on a wafer and a single-crystalline thin-film is then deposited on the flux layer placed on the wafer. A melt of a composition which contains raw materials and a flux and which satisfies the above inequality is prepared and the melt is cooled such that a single crystal is grown. A CuO flux layer is deposited on a wafer and Bi—Ti—O is supplied to the flux layer using a Bi6Ti3O12, Bi7Ti3O12, or Bi8Ti3O12 target of which the Bi content is greater than that of an object film such that a Bi4Ti3O12 single-crystalline thin-film is formed above the wafer.

Dependencies are inferred from the claim text.