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US 7,442,114 B2Granted
Methods for silicon electrode assembly etch rate and etch uniformity recovery
AssigneeLam Research Corporation
InventorsTuochuan Huang, Daxing Ren, Hong Shih, Catherine Zhou, Chun Yan, Enrico Magni, Bi Ming Yen, Jerome Hubacek, Dae J. Lim, Dougyong Sung
Life of this patent
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Abstract
Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
Claims19
A method of cleaning a used electrode assembly comprising a plasma-exposed silicon surface, the method comprising:
- polishing the silicon surface, wherein the cleaning removes black silicon from the silicon surface;
- and
- removing particles from gas outlets and within joints of the electrode assembly after polishing, where the particles are removed using a nitrogen/deionized water gun.
Dependencies are inferred from the claim text.