Inspection apparatus of wiring pattern, inspection method, detection apparatus, detection method

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• a polarized beam splitter to extract first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means and to guide the extracted first linearly polarized light in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles;
• a quarter-wavelength plate to convert the first linearly polarized light guided by the polarized beam splitter into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• and
• image pickup means,
• wherein the circularly polarized light emitted by the irradiation means is inverted by the work to reverse a rotation direction, and is thereafter transmitted through the quarter-wavelength plate, second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles is extracted by the polarized beam splitter, and the extracted second linearly polarized light is imaged by the image pickup means, and
• wherein the parallel light guiding means comprises
• a light guide to guide the light from the light source;
• a diffusion plate to diffuse the light from the light source while keeping an intensity distribution to be constant;
• paralleling means for bringing the light diffused by the diffusion plate substantially in parallel;
• and
• means for guiding the parallel light brought by the paralleling means.

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• a polarization plate to extract first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means;
• a polarized beam splitter to guide the first linearly polarized light extracted by the polarization plate in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles;
• a quarter-wavelength plate to convert the first linearly polarized light guided by the polarized beam splitter into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• and
• image pickup means,
• wherein the circularly polarized light emitted by the irradiation means is reflected by the work to reverse a rotation direction, and is thereafter transmitted through the quarter-wavelength plate, second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles is extracted by the polarized beam splitter, and the extracted second linearly polarized light is imaged by the image pickup means, and
• wherein the parallel light guiding means comprises
• a light guide to guide the light from the light source;
• a diffusion plate to diffuse the light from the light source while keeping an intensity distribution to be constant;
• paralleling means for bringing the light diffused by the diffusion plate substantially in parallel;
• and
• means for guiding the parallel light brought by the paralleling means.

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• first extraction means for extracting first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means;
• circularly polarized light conversion means for converting the first linearly polarized light extracted by the first extraction means into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the circularly polarized light conversion means;
• second extraction means for extracting second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles from reflected light obtained by reflecting the circularly polarized light emitted by the irradiation means by the work;
• image pickup means for imaging the second linearly polarized light extracted by the second extraction means;
• and
• cooling means for cooling the parallel light guiding means.

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• a polarized beam splitter to extract first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means and to guide the extracted first linearly polarized light in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles;
• a quarter-wavelength plate to convert the first linearly polarized light guided by the polarized beam splitter into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• image pickup means;
• and
• cooling means for cooling the parallel light guiding means,
• wherein the circularly polarized light emitted by the irradiation means is inverted by the work to reverse a rotation direction, and is thereafter transmitted through the quarter-wavelength plate, second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles is extracted by the polarized beam splitter, and the extracted second linearly polarized light is imaged by the image pickup means.

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• a polarization plate to extract first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means;
• a polarized beam splitter to guide the first linearly polarized light extracted by the polarization plate in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles;
• a quarter-wavelength plate to convert the first linearly polarized light guided by the polarized beam splitter into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• image pickup means;
• and
• cooling means for cooling the parallel light guiding means,
• wherein the circularly polarized light emitted by the irradiation means is reflected by the work to reverse a rotation direction, and is thereafter transmitted through the quarter-wavelength plate, second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles is extracted by the polarized beam splitter, and the extracted second linearly polarized light is imaged by the image pickup means.

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• first extraction means for extracting first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means;
• circularly polarized light conversion means for converting the first linearly polarized light extracted by the first extraction means into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the circularly polarized light conversion means;
• second extraction means for extracting second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles from reflected light obtained by reflecting the circularly polarized light emitted by the irradiation means by the work;
• image pickup means for imaging the second linearly polarized light extracted by the second extraction means;
• selection means for selecting a wavelength region in which a difference between an amount of the uppermost-layer wiring pattern by reflected light and that of a pattern other than the uppermost-layer wiring pattern by the reflected light is larger than a predetermined value in the second linearly polarized light;
• and
• selected wavelength light component guiding means for guiding a light component in the wavelength region selected by the selection means.

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• a polarized beam splitter to extract first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means and to guide the extracted first linearly polarized light in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles;
• a quarter-wavelength plate to convert the first linearly polarized light guided by the polarized beam splitter into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• image pickup means;
• selection means for selecting a wavelength region in which a difference between an amount of the uppermost-layer wiring pattern by reflected light and that of a pattern other than the uppermost-layer wiring pattern by the reflected light is larger than a predetermined value in the second linearly polarized light;
• and
• selected wavelength light component guiding means for guiding a light component in the wavelength region selected by the selection means,
• wherein the circularly polarized light emitted by the irradiation means is inverted by the work to reverse a rotation direction, and is thereafter transmitted through the quarter-wavelength plate, second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles is extracted by the polarized beam splitter, and the extracted second linearly polarized light is imaged by the image pickup means.

A wiring pattern detection apparatus which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the apparatus comprising:

• a light source;
• parallel light guiding means for guiding light from the light source substantially in parallel;
• a polarization plate to extract first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means;
• a polarized beam splitter to guide the first linearly polarized light extracted by the polarization plate in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles;
• a quarter-wavelength plate to convert the first linearly polarized light guided by the polarized beam splitter into circularly polarized light;
• irradiation means for irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• image pickup means;
• selection means for selecting a wavelength region in which a difference between an amount of the uppermost-layer wiring pattern by reflected light and that of a pattern other than the uppermost-layer wiring pattern by the reflected light is larger than a predetermined value in the second linearly polarized light;
• and
• selected wavelength light component guiding means for guiding a light component in the wavelength region selected by the selection means,
• wherein the circularly polarized light emitted by the irradiation means is reflected by the work to reverse a rotation direction, and is thereafter transmitted through the quarter-wavelength plate, second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles is extracted by the polarized beam splitter, and the extracted second linearly polarized light is imaged by the image pickup means.

A wiring pattern detection method which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the method comprising:

• guiding light substantially in parallel;
• extracting first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding;
• converting the first linearly polarized light extracted by the first extracting into circularly polarized light;
• irradiating the work with the circularly polarized light converted by the circularly polarized light converting;
• extracting second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles from reflected light obtained by reflecting the circularly polarized light emitted by the irradiating by the work;
• and
• imaging the second linearly polarized light extracted by the second extracting,
• wherein the guiding comprises
• diffusing the light while keeping an intensity distribution to be constant;
• bringing the light diffused by the diffusing substantially in parallel;
• and
• guiding the parallel light from the bringing.

A wiring pattern detection method which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the method comprising:

• guiding light substantially in parallel;
• extracting first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding means by a polarization plate;
• guiding the first linearly polarized light extracted by the polarization plate in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles using a polarized beam splitter;
• converting the first linearly polarized light guided by the polarized beam splitter into circularly polarized light by a quarter-wavelength plate;
• irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• and
• reflecting the circularly polarized light emitted to the work by the work to reverse a rotation direction, thereafter transmitting the polarized light through the quarter-wavelength plate, and extracting second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles by the polarized beam splitter to image the extracted second linearly polarized light,
• wherein the guiding comprises
• diffusing the light while keeping an intensity distribution to be constant;
• bringing the light diffused by the diffusing substantially in parallel;
• and
• guiding the parallel light from the bringing.

A wiring pattern detection method which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the method comprising:

• guiding light substantially in parallel;
• extracting first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light guided by the parallel light guiding;
• converting the first linearly polarized light extracted by the first extracting into circularly polarized light;
• irradiating the work with the circularly polarized light converted by the circularly polarized light converting;
• extracting second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles from reflected light obtained by reflecting the circularly polarized light emitted by the irradiating by the work;
• imaging the second linearly polarized light extracted by the second extracting;
• selecting a wavelength region in which a difference between an amount of the uppermost-layer wiring pattern by reflected light and that of a pattern other than the uppermost-layer wiring pattern by the reflected light is larger than a predetermined value in the second linearly polarized light;
• and
• guiding a light component in the wavelength region selected by the selecting.

A wiring pattern detection method which optically detects an uppermost-layer wiring pattern of a work comprising a multilayered wiring substrate for a semiconductor package having wiring patterns on at least front/back surfaces of a light-transmitting base film, the method comprising:

• guiding light substantially in parallel;
• extracting first linearly polarized light whose electric-field vector direction crosses a guiding direction of the light at right angles from the light from the parallel light guiding by a polarization plate;
• guiding the first linearly polarized light extracted by the polarization plate in the light guiding direction and a direction crossing the direction of the electric-field vector of the first linearly polarized light at right angles using a polarized beam splitter;
• converting the first linearly polarized light guided by the polarized beam splitter into circularly polarized light by a quarter-wavelength plate;
• irradiating the work with the circularly polarized light converted by the quarter-wavelength plate;
• reflecting the circularly polarized light emitted to the work by the work to reverse a rotation direction, thereafter transmitting the polarized light through the quarter-wavelength plate, and extracting second linearly polarized light whose electric-field vector direction crosses the first linearly polarized light at right angles by the polarized beam splitter to image the extracted second linearly polarized light;
• selecting a wavelength region in which a difference between an amount of the uppermost-layer wiring pattern by reflected light and that of a pattern other than the uppermost-layer wiring pattern by the reflected light is larger than a predetermined value in the second linearly polarized light;
• and
• guiding a light component in the wavelength region selected by the selecting.