Surface-protecting sheet and semiconductor wafer lapping method

A method for grinding a semiconductor wafer comprising:

• allowing a semiconductor wafer, on a circuit surface of which bumps are formed, to be in a surface-protected form wherein an adhesive layer having an opening portion with no adhesive corresponding to a portion of the wafer where the bumps are formed and an adhesive portion corresponding to an outer peripheral portion of the wafer where bumps are not formed is formed and a base sheet is laminated on the adhesive layer so as to cover the opening portion of the adhesive layer,
• placing the semiconductor wafer of the surface-protected form on a fixing table in such a manner that the base sheet faces the fixing table, and
• grinding a back surface of the semiconductor wafer, wherein:
• the adhesive layer is a double side coated adhesive sheet wherein adhesive layers are provided on both surfaces of a core material film, and wherein:
• one adhesive layer on the side facing the base sheet is an adhesive having strong adhesion strength and other adhesive layer on the side facing the wafer is an energy ray-curable adhesive which is cured by irradiation with energy rays to exhibit removability.

A method for grinding a semiconductor wafer comprising:

• allowing a semiconductor wafer, on a circuit surface of which bumps are formed, to be in a surface-protected form wherein an adhesive layer having an opening portion with no adhesive corresponding to a portion of the wafer where the bumps are formed and an adhesive portion corresponding to an outer peripheral portion of the wafer where bumps are not formed is formed and a base sheet is laminated on the adhesive layer so as to cover the opening portion of the adhesive layer,
• placing the semiconductor wafer of the surface-protected form on a fixing table in such a manner that the base sheet faces the fixing table, and grinding a back surface of the semiconductor wafer, wherein:
• the semiconductor wafer is allowed to have the surface-protected form by:
• supplying the adhesive layer in such manner that both surfaces of the adhesive layer are laminated with release films of light-releasable type and heavy-releasable type, wherein the adhesive layer and the release film of light-releasable type are punched to form the opening portion, so that the adhesive layer is supported on the release film of heavy-releasable type,
• peeling the release film of light-releasable type while adhering the exposed surface of the adhesive layer to the base sheet, and
• peeling the release film of heavy-releasable type while adhering the exposed surface of the adhesive layer to the outer peripheral portion of the wafer.

A method for grinding a semiconductor wafer comprising:

• allowing a semiconductor wafer, on a circuit surface of which bumps are formed, to be in a surface-protected form wherein an adhesive layer having an opening portion with no adhesive corresponding to a portion of the wafer where the bumps are formed and an adhesive portion corresponding to an outer peripheral portion of the wafer where bumps are not formed is formed and a base sheet is laminated on the adhesive layer so as to cover the opening portion of the adhesive layer,
• placing the semiconductor wafer of the surface-protected form on a fixing table in such a manner that the base sheet faces the fixing table, and
• grinding a back surface of the semiconductor wafer, wherein:
• the semiconductor wafer is allowed to have the surface-protected form by:
• sticking the adhesive layer having an opening portion corresponding to a portion of the wafer where bumps are formed and an adhesive portion corresponding to an outer peripheral portion of the wafer where bumps are not formed, to the outer peripheral portion of the semiconductor wafer on a circuit surface of which bumps are formed, and
• laminating the base sheet on the adhesive layer so as to cover the opening portion of the adhesive layer, and
• supplying the adhesive layer in such manner that both surfaces of the adhesive layer are laminated with release films of light-releasable type and heavy-releasable type, wherein the adhesive layer and the release film of light-releasable type are punched to form the opening portion, so that the adhesive layer is supported on the release film of heavy releasable type.