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US 7,423,365 B2Granted
Surface acoustic wave device
AssigneesFujitsu Media Devices Limited, Fujitsu Limited
InventorsJun Tsutsumi, Shogo Inoue, Masanori Ueda
Life of this patent
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Abstract
A surface acoustic wave device includes at least one interdigital transducer having electrodes of a double-layered structure in which an upper film and an underlying film are laminated. The upper film has a main component of Al and a first metal of Ti added to the main component. The underlying film has a main component of Ti.
Claims4
A surface acoustic wave device comprising:
- at least one interdigital transducer having electrodes of a double-layered structure in which an upper film and an underlying film are laminated,
- the upper film having a main component of Al and a first metal of Ti added to the main component:
- and
- the underlying film having a main component of Ti, wherein
- a concentration of Ti in the upper film is 0.4 wt % or less,
- a resistance of the electrodes is 10 μΩ·cm or less, and
- the upper film includes a second metal of Mg or Cu added thereto, the second metal having a concentration of 0.5 wt % or less.
4 more elements
A surface acoustic wave duplexer comprising a surface acoustic wave device comprising:
- at least one interdigital transducer having electrodes of a double-layered structure in which an upper film and an underlying film are laminated,
- the upper film having a main component of Al and a first metal of Ti added to the main component:
- and
- the underlying film having a main component of Ti, wherein
- a concentration of Ti in the upper film is 0.4 wt % or less,
- a resistance of the electrodes is 10 μΩ·cm or less, and
- the upper film includes a second metal of Mg or Cu added thereto, the second
- metal having a concentration of 0.5 wt % or less.
5 more elements
Dependencies are inferred from the claim text.