Semiconductor light-emitting device, lighting module, lighting device and method for manufacturing semiconductor light-emitting device

A method for manufacturing a semiconductor light-emitting device, comprising the steps of:

• forming a semiconductor multilayer film on one principal surface of a single crystal substrate so that the semiconductor multilayer film comprises a first conductivity type layer, a light-emitting layer and a second conductivity type layer in order of increasing proximity to the single crystal substrate, the second conductivity type layer being disposed on an extraction side of light emitted from the light-emitting layer;
• forming first and second electrodes contacting with the first and the second conductivity type layers, respectively;
• providing via holes in a substrate and then forming via conductors in the via holes;
• forming conductive patterns on one principal surface of the substrate so as to electrically connect with the via conductors;
• forming first and second terminals on a rear face of the substrate with respect to the principal surface so as to electrically connect with the conductive patterns through the via conductors;
• electrically connecting the first electrode with the first terminal through one of the conductive patterns and one of the via conductors, and electrically connecting the second electrode with the second terminal through another conductive pattern and another via conductor;
• forming on the substrate a phosphor layer absorbing the light emitted from the light-emitting layer to emit fluorescence so as to cover the semiconductor multilayer film and so that an outer edge of a cross section of the phosphor layer taken in a direction parallel to the principal surface of the substrate on the semiconductor multilayer film side has a substantially circular shape or a substantially regular polygonal shape having five or more sides;
• and
• cutting the substrate into a substantially circular shape or a substantially regular polygonal shape having five or more sides so as to surround a region of the substrate on which the phosphor layer is formed.

A method for manufacturing a semiconductor light-emitting device, comprising the steps of:

• forming a semiconductor multilayer film on one principal surface of a single crystal substrate so that the semiconductor multilayer film comprises a first conductivity type layer, a light-emitting layer and a second conductivity type layer in order of increasing proximity to the single crystal substrate, the second conductivity type layer being disposed on an extraction side of light emitted from the light-emitting layer;
• forming a first electrode contacting with a principal surface of the first conductivity type layer;
• aside from the above steps, providing via holes in a substrate and then forming via conductors in the via holes;
• forming a conductive pattern on one principal surface of the substrate so as to electrically connect with one of the via conductors;
• forming a metal layer on the conductive pattern;
• bonding the first electrode and the metal layer so as to form a laminate in which the semiconductor multilayer film is sandwiched between the single crystal substrate and the substrate;
• detaching the single crystal substrate from the semiconductor multilayer film;
• forming a second electrode that electrically connects the second conductivity type layer with another via conductor;
• forming on a rear face of the substrate with respect to the principal surface a first terminal that electrically connects with the conductive pattern trough the corresponding via conductor and a second terminal that electrically connects with the second electrode through the corresponding via conductor;
• forming on the substrate a phosphor layer absorbing the light emitted from the light-emitting layer to emit fluorescence so that the phosphor layer contacts with a principal surface of the second conductivity type layer and covers the semiconductor multilayer film and so that an outer edge of a cross section of the phosphor layer taken in a direction parallel to the principal surface of the substrate on the semiconductor multilayer film side has a substantially circular shape or a substantially regular polygonal shape having five or more sides;
• and
• cutting the substrate into a substantially circular shape or a substantially regular polygonal shape having five or more sides that surrounds a region of the substrate on which the phosphor layer is formed.