Photoresist composition and method of forming a pattern using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoung-Mi Kim, Jae-Ho Kim, Yeu-Young Youn, Youn-Kyung Wang
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Abstract
The photoresist composition of the present invention includes a solvent mixture, a resin, a photo acid generator, and a quencher, the solvent mixture comprising a first solvent containing an ether compound and a second solvent having a polarity stronger than the first solvent, wherein an amount of the first solvent is in a range of about 61% to about 79% by weight, and an amount of the second solvent is in a range of about 21% to about 39% by weight based on a total weight of the solvent mixture.
Claims17
A photoresist composition comprising a solvent mixture, a resin, a photo acid generator, and a quencher, the solvent mixture comprising a first solvent containing an ether compound and a second solvent having a polarity stronger than the first solvent, wherein an amount of the first solvent is in a range of about 61% to about 79% by weight based on a total weight of the solvent mixture, and an amount of the second solvent is in a range of about 21% to about 39% by weight based on the total weight of the solvent mixture, wherein the first solvent includes at least one selected from the group consisting of propylene glycol monomethyl ether (PGME) and propylene glycol monomethyl ether acetate (PGMEA), and wherein the second solvent includes at least one selected from the group consisting of cyclohexanone, ethyl lactate, methyl 2-hydroxybutyrate, heptanone, lactone.
A photoresist composition comprising a solvent mixture, a resin, a photo acid generator and a quencher, the solvent mixture comprising a first solvent of propylene glycol monomethyl ether acetate (PGMEA) and a second solvent having a stronger polarity than the first solvent, wherein a weight ratio between the first solvent and the second solvent is in a range of about 7:2 to about 7:4, and wherein the second solvent includes at least one selected from the group consisting of cyclohexanone, ethyl lactate, methyl 2-hydroxybutyrate, heptanone and lactone.
A method of forming a photoresist pattern, comprising:
- coating a photoresist composition onto a substrate to form a photoresist film, the photoresist composition including a solvent mixture, a resin, a photo acid generator, and a quencher, wherein the solvent mixture comprises a first solvent having an ether compound and a second solvent having a polarity stronger than the first solvent, and an amount of the first solvent is in a range of about 61% to about 79% by weight based on a total weight of the solvent mixture, and an amount of the second solvent is in a range of about 21% to about 39% by weight based on the total weight of the solvent mixture, wherein the first solvent includes at least one selected from the group consisting of propylene glycol monomethyl ether (PGME) and propylene glycol monomethyl ether acetate (PGMEA), and wherein the second solvent includes at least one selected from the group consisting of cyclohexanone, ethyl lactate, methyl 2-hydroxybutyrate, heptanone, lactone;
- selectively exposing the photoresist film to illuminating light;
- and
- developing the exposed photoresist film.
A method of forming a photoresist pattern, comprising:
- coating a photoresist composition onto a substrate to form a photoresist film, the photoresist composition including a solvent mixture, a resin, a photo acid generator, and a quencher, wherein the solvent mixture comprising a first solvent of propylene glycol monomethyl ether acetate (PGMEA) and a second solvent having a stronger polarity than the first solvent, wherein a weight ratio between the first solvent and the second solvent is in a range of about 7:2 to about 7:4, and wherein the second solvent includes at least one selected from the group consisting of cyclohexanone, ethyl lactate, methyl 2-hydroxybutyrate, heptanone and lactone;
- selectively exposing the photoresist film to illuminating light;
- and
- developing the exposed photoresist film.
A photoresist composition comprising a solvent mixture, a resin, a photo acid generator, and a quencher, the solvent mixture including about 61% to about 79% by weight of propylene glycol monomethyl ether acetate (PGMEA) and about 21% to about 39% by weight of cyclohexanone based on a total weight of the solvent mixture.
Dependencies are inferred from the claim text.