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US 7,415,058 B2Granted
Ultra-high-Q surface-tension-induced monolithically integrated on-chip resonator and associated devices
AssigneeMassachusetts Institute of Technology
InventorsJuejun Hu, Anuradha M. Agarwal, Lionel C. Kimerling
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Abstract
A resonator structure includes a substrate and a cladding layer formed on the substrate. A plurality of lens-shaped optical structures is formed on the cladding layer. The lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of the resonator structure and increase substantially its Q factor.
Claims24
A resonator structure comprising
- a substrate;
- a cladding layer that is formed on said substrate;
- and
- a plurality of lens-shaped optical structures that is formed on said cladding layer, said lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of said resonator structure and increase its Q factor.
1 more element
A method of forming a resonator structure comprising
- providing a substrate;
- forming a cladding layer on said substrate;
- and
- forming a plurality of lens-shaped optical structures on said cladding layer, said lens-shaped optical structures comprise chalcogenide glass being exposed to a reflow process so as to make smooth the surface of said resonator structure and increase its Q factor.
1 more element
Dependencies are inferred from the claim text.