Method of depositing a metal-containing film
AssigneeRohm and Haas Electronic Materials LLC
InventorsDeodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
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Abstract
A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
Claims11
A method of depositing a metal-containing film on a substrate comprising the steps of:
- a) conveying one or more organometallic compounds of formula I in a gaseous phase to a deposition chamber containing a substrate,
- wherein M is Ge;
- R1 and R2 are independently chosen from H, alkyl, alkenyl, alkynyl and aryl;
- each R3 is independently chosen from n-propyl, iso-propyl, n-butyl, iso-butyl, sec-butyl, tert-butyl, pentyl, cyclopentyl, hexyl, cyclohexyl, alkenyl, alkynyl and aryl, provided that none of R3 is cyclopentadienyl;
- each R4 is independently chosen from (C3-C12)alkyl;
- X is halogen;
- a=0-3;
- b=0-3;
- c=0-3;
- d=0-2;
- e=0-4;
- and a+b+c+d+e=4;
- wherein B3≠R4;
- wherein the sums of a+b and a+d are each ≦3;
- b) decomposing the one or more organometallic compounds in the deposition chamber;
- and c) depositing a metal-containing film comprising germanium on the substrate.
A method of depositing a germanium-containing film on a substrate comprising the steps of:
- a) conveying one or more organometallic compounds of formula IIA or IIB:
- wherein R1 and R2 are independently chosen from alkyl, alkenyl, alkynyl or aryl;
- each R3 is independently chosen from (C1-C12)alkyl, alkenyl, alkynyl and aryl;
- each R4 is independently chosen from branched and cyclic (C3-C5)alkyl;
- each R5 is independently chosen from (C1-C12)alkyl, alkenyl, alkynyl and aryl;
- X is halogen;
- a′=0-3;
- b′=0-2;
- c′=1-3;
- d′=0-3;
- a′+b′+c′+d′=4;
- a″=0-2;
- b″=0-2;
- e″=1-2;
- f″=0-2;
- a″+b″+e″+f″=4;
- wherein at least two of a″, b″and f″≠0;
- provided that R5≠CH3 when a″=1, e″=1, f″=2, and R4=(CH3)C;
- and provided that R3 is branched or cyclic (C3-C5)alkyl when c′+d′=4, in a gaseous phase to a deposition chamber containing a substrate;
- b) decomposing the organometallic compound in the deposition chamber;
- and c) depositing a germanium-containing film on the substrate.
A method of depositing a metal-containing film comprising the steps of:
- a) providing a substrate;
- b) disposing the substrate in a deposition chamber;
- c) conveying one or more organometallic compounds in a gaseous phase to the deposition chamber, wherein one organometallic compound is iso-butylgermane;
- and d) depositing a metal-containing film on the substrate, wherein the metal-containing film comprises germanium.
A method of depositing a multi-layer structure on a substrate comprising the steps of:
- a) providing a substrate;
- b) disposing the substrate in a deposition chamber;
- c) conveying iso-butylgermane in a gaseous phase to the deposition chamber;
- d) decomposing the iso-butylgermane to form a germanium-containing film on the substrate;
- e) conveying a silicon precursor chosen from one or more of silane and dichlorosilane in a gaseous phase to the deposition chamber;
- f) decomposing the silicon precursor;
- and g) depositing a silicon-containing film substrate.
Dependencies are inferred from the claim text.