# US 7,411,988 B2 · Semiconductor laser device

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- Number: US 7,411,988 B2
- Document ID: US7411988B2
- Status: Granted
- Kind: B2
- Application number: 11/276,242
- Filed: 2006-02-20
- Published: 2006-08-24
- Granted: 2008-08-12
- Earliest claimed: 2005-02-21
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Akira Tanaka
- Web page: https://patentgrep.com/patent/US7411988B2

## CPC

- H01S 5/22: having a ridge or stripe structure
- H01S 5/16: Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface (H01S5/14 takes precedence)
- H01S 5/32341: {blue laser based on GaN or GaP}
- H01S 5/168: {with window regions comprising current blocking layers}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

In various aspects, a semiconductor light emitting device provided between a first edge and a second edge opposite to the first edge and emitting laser from the first edge, may include: a first clad layer of a first conductivity type having a nitride semiconductor; an active layer provided on the first clad layer and having a nitride semiconductor; a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor and a ridge waveguide, the ridge waveguide having an activation region and a first edge region which is adjacent to the activation region and is extended from the first edge in a direction from the first edge to the second edge; an upper electrode provided on the ridge waveguide in the activation region; and a dielectric layer provided on a side surface of the ridge waveguide in the activation region, wherein the ridge waveguide in the first edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

## Claims

### Claim 1

A semiconductor laser device provided between a first edge and a second edge opposite to the first edge and emitting laser from the first edge, comprising:
a first clad layer of a first conductivity type having a nitride semiconductor;
an active layer provided on the first clad layer and having a nitride semiconductor;
a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor and a ridge waveguide, the ridge waveguide having an activation region and a first edge region, which is adjacent to the activation region and is extended from the first edge in a direction from the first edge to the second edge;
an upper electrode provided on the ridge waveguide in the activation region; and
a dielectric layer provided on a side surface of the ridge waveguide in the activation region,
wherein the ridge waveguide in the first edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

### Claim 2 (depends on 1)

A semiconductor light emitting device of claim 1, wherein the ridge waveguide has a second edge region which is adjacent to the activation region and is extended from the second edge in a direction from the second edge to the first edge, and
wherein the ridge waveguide in the second edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

### Claim 3 (depends on 1)

A semiconductor light emitting device of claim 1, wherein the activation ratio of the second conductivity type impurity in the activation region is no less than 7%, and the activation ratio of the second conductivity type impurity in the first edge region is less than 7%.

### Claim 4 (depends on 2)

A semiconductor light emitting device of claim 2, wherein the activation ratio of the second conductivity type impurity in the activation region is no less than 7%, and the activation ratio of the second conductivity type impurity in the first edge region is less than 7%.

### Claim 5 (depends on 1)

A semiconductor light emitting device of claim 1, further comprising a dielectric layer provided on a side of the ridge waveguide in the first edge region.

### Claim 6 (depends on 2)

A semiconductor light emitting device of claim 2, further comprising a dielectric layer provided on a side of the ridge waveguide in the first edge region.

### Claim 7

A semiconductor laser device provided between a first edge and a second edge opposite to the first edge and emitting laser from the first edge, comprising:
a first clad layer of a first conductivity type having a nitride semiconductor;
an active layer provided on the first clad layer and having a nitride semiconductor;
a second clad layer of a second conductivity type provided on the active layer having a nitride semiconductor and a ridge waveguide, the ridge waveguide having an activation region and a first edge region, which is adjacent to the activation region and is extended from the first edge in a direction from the first edge to the second edge;
an upper electrode provided on the ridge waveguide in the activation region; and
a dielectric layer provided on a side surface of the ridge waveguide in the activation region,
wherein the ridge waveguide in the first edge region has a lower hydrogen content than the ridge waveguide in the activation region.

### Claim 8 (depends on 7)

A semiconductor light emitting device of claim 7, wherein the ridge waveguide has a second edge region which is adjacent to the activation region and is extended from the second edge in a direction from the second edge to the first edge, and
wherein the ridge waveguide in the second edge region has a lower hydrogen content than the ridge waveguide in the activation region.

### Claim 9 (depends on 7)

A semiconductor light emitting device of claim 7 wherein the ridge waveguide in the first edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

### Claim 10 (depends on 8)

A semiconductor light emitting device of claim 8, wherein the ridge waveguide in the first edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

### Claim 11 (depends on 8)

A semiconductor light emitting device of claim 8 wherein the ridge waveguide in the second edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

### Claim 12 (depends on 10)

A semiconductor light emitting device of claim 10 wherein the ridge waveguide in the second edge region has a lower activation ratio of a second conductivity type impurity than the ridge waveguide in the activation region.

### Claim 13 (depends on 9)

A semiconductor light emitting device of claim 9, wherein the activation ratio of the second conductivity type impurity in the activation region is no less than 7%, and the activation ratio of the second conductivity type impurity in the first edge region is less than 7%.

### Claim 14 (depends on 12)

A semiconductor light emitting device of claim 12, wherein the activation ratio of the second conductivity type impurity in the activation region is no less than 7%, and the activation ratio of the second conductivity type impurity in the first edge region and the second ridge region is less than 7%.