# US 7,411,825 B2 · Semiconductor integrated circuit device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,411,825 B2 - Document ID: US7411825B2 - Status: Granted - Kind: B2 - Application number: 11/450,355 - Filed: 2006-06-12 - Published: 2007-02-15 - Granted: 2008-08-12 - Earliest claimed: 2005-07-27 - Assignees: Kabushiki Kaisha Toshiba - Inventors: Hiroyuki Kutsukake; Fumitaka Arai - Web page: https://patentgrep.com/patent/US7411825B2 ## CPC - G11C 16/3468: {Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing} - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A semiconductor integrated circuit device includes first to third memory cell units, first and second bit lines, and first and second source lines. The first to third memory cell units include memory cell transistors serially connected between selection transistors. The first bit line is commonly connected to one end of the current path of the first memory cell unit and one end of the current path of the second memory cell unit. The second bit line is connected to one end of the current path of the third memory cell unit. The first source line is connected to the other end of the current path of the first memory cell unit. The second source line is commonly connected to the other end of the current path of the second memory cell unit and the other end of the current path of the third memory cell unit. ## Claims ### Claim 1 A semiconductor integrated circuit device comprising: first to third memory cell units having memory cell transistors serially connected between selection transistors, a first bit line commonly connected to one end of a current path of the first memory cell unit and one end of a current path of the second memory cell unit, a second bit line connected to one end of a current path of the third memory cell unit, a first source line connected to the other end of the current path of the first memory cell unit, and a second source line commonly connected to the other end of the current path of the second memory cell unit and the other end of the current path of the third memory cell unit. ### Claim 2 (depends on 1) The device according to claim 1, wherein first to third memory cell transistors adjacent to one-side selection transistors of the first to third memory cell units and fourth to sixth memory cell transistors adjacent to the first to third memory cell transistors are used as selection transistors. ### Claim 3 (depends on 2) The device according to claim 2, wherein the first memory cell transistor is an enhancement type transistor, the second and third memory cell transistors are depletion type transistors, the fourth memory cell transistor is a depletion type transistor, and the fifth and sixth memory cell transistors are enhancement type transistors. ### Claim 4 (depends on 2) The device according to claim 2, wherein a spare data writing operation is performed for the first to sixth memory cell transistors after data erasing and before data writing. ### Claim 5 (depends on 3) The device according to claim 3, wherein a spare data writing operation is performed for the first sixth memory cell transistors after data erasing and before data writing. ### Claim 6 (depends on 4) The device according to claim 4, wherein data in the spare data writing operation is input via the first and second source lines. ### Claim 7 (depends on 5) The device according to claim 5, wherein data in the spare data writing operation is input via the first and second source lines. ### Claim 8 A semiconductor integrated circuit device comprising: a semiconductor substrate, element isolation regions which are arranged at a pitch P on the semiconductor substrate and separate first to third element regions in the semiconductor substrate, a first memory cell unit formed in the first element region and having memory cell transistors serially connected between selection transistors, a second memory cell unit formed in the second element region and having memory cell transistors serially connected between selection transistors, a third memory cell unit formed in the third element region and having memory cell transistors serially connected between selection transistors, a first bit line contact formed to extend over the first element region, element isolation region and second element region and commonly connected to one end of a current path of the first memory cell unit and one end of a current path of the second memory cell unit, a second bit line contact formed to extend over the third element region and element isolation region and connected to one end of a current path of the third memory cell unit, a first source line contact formed to extend over the element isolation region and first element region and connected to the other end of the current path of the first memory cell unit, and a second source line contact formed to extend over the second element region, element isolation region and third element region and commonly connected to the other end of the current path of the second memory cell unit and the other end of the current path of the third memory cell unit. ### Claim 9 (depends on 8) The device according to claim 8, wherein first to third memory cell transistors of the first to third memory cell units which are arranged adjacent to selection transistors on the first to third bit line contacts side and fourth to sixth memory cell transistors adjacent to the first to third memory cell transistors are used as selection transistors. ### Claim 10 (depends on 8) The device according to claim 8, wherein the first and second bit line contacts are arranged at a pitch 2P. ### Claim 11 (depends on 8) The device according to claim 8, wherein the first and second source line contacts are arranged at a pitch 2P. ### Claim 12 (depends on 9) The device according to claim 9, wherein the first and second bit line contacts are arranged at a pitch 2P. ### Claim 13 (depends on 9) The device according to claim 9, wherein the first and second source line contacts are arranged at a pitch 2P. ### Claim 14 (depends on 10) The device according to claim 10, further comprising a first bit line connected to the first bit line contact and a second bit line connected to the second bit line contact, wherein the first and second bit lines are arranged at a pitch 2P above the element isolation regions. ### Claim 15 (depends on 12) The device according to claim 12, further comprising a first bit line connected to the first bit line contact and a second bit line connected to the second bit line contact, wherein the first and second bit lines are arranged at a pitch 2P above the element isolation regions. ### Claim 16 (depends on 11) The device according to claim 11, further comprising a first source line connected to the first source line contact and a second source line connected to the second source line contact, wherein the first and second source lines are selectively used to supply different potentials. ### Claim 17 (depends on 13) The device according to claim 13, further comprising a first source line connected to the first source line contact and a second source line connected to the second source line contact, wherein the first and second source lines are selectively used to supply different potentials.