# US 7,411,819 B2 · Semiconductor integrated circuit device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,411,819 B2 - Document ID: US7411819B2 - Status: Granted - Kind: B2 - Application number: 11/533,638 - Filed: 2006-09-20 - Published: 2007-03-22 - Granted: 2008-08-12 - Earliest claimed: 2005-09-22 - Assignees: Kabushiki Kaisha Toshiba - Inventors: Ken Takeuchi - Web page: https://patentgrep.com/patent/US7411819B2 ## CPC - G11C 16/0483: {comprising cells having several storage transistors connected in series} - G11C 16/12: Programming voltage switching circuits - G11C 16/3454: {Arrangements for verifying correct programming or for detecting overprogrammed cells} - G11C 16/3459: {Circuits or methods to verify correct programming of nonvolatile memory cells} - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A semiconductor integrated circuit device has a first memory cell group including a plurality of rewritable nonvolatile memory cells arranged on a semiconductor chip and a second memory cell group including a plurality of rewritable nonvolatile memory cells arranged on the semiconductor chip. Setting of the write threshold voltage of the memory cell of the first memory cell group and setting of the write threshold voltage of the memory cell of the second memory cell group are variable. ## Claims ### Claim 1 A semiconductor integrated circuit device comprising: a semiconductor chip, a first memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, and a second memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, wherein a verify voltage for verifying a lower side of a threshold voltage is made variable when a specific data is programmed into each of the memory cells. ### Claim 2 (depends on 1) The device according to claim 1, wherein the write threshold voltage is made variable by making a variable a step-up voltage width of a word line at write time. ### Claim 3 (depends on 1) The device according to claim 1, wherein the write threshold voltage is made variable by making a variable a write suppression voltage applied to a bit line. ### Claim 4 (depends on 1) The device according to claim 1, wherein the write threshold voltage is made variable by making a variable word line voltage at verify read time. ### Claim 5 (depends on 1) The device according to claim 1, wherein word line voltage at read time of the first memory cell group and word line voltage at read time of the second memory cell group are made variable. ### Claim 6 (depends on 1) The device according to claim 1, wherein a distribution width of the write threshold voltage of the first memory cell group is smaller than a distribution width of the write threshold voltage of the second memory cell group. ### Claim 7 (depends on 1) The device according to claim 1, wherein the maximum write threshold voltage of the first memory cell group is lower than the maximum write threshold voltage of the second memory cell group. ### Claim 8 (depends on 1) The device according to claim 1, wherein each of the first and second memory cell groups configure a page. ### Claim 9 (depends on 1) The device according to claim 1, wherein the first and second memory cell groups configure a block. ### Claim 10 (depends on 1) The device according to claim 1, wherein the first and second memory cell groups configure a memory cell array. ### Claim 11 (depends on 1) The device according to claim 1, wherein the first and second memory cell groups are each divided into the units which comprise one or a plurality of word lines. ### Claim 12 (depends on 1) The device according to claim 1, wherein gate length of the nonvolatile memory cell contained in the first memory cell group is different from gate length of the nonvolatile memory cell contained in the second memory cell group. ### Claim 13 (depends on 1) The device according to claim 1, wherein the first memory cell group is arranged adjacent to the selection gate line and gate length of the nonvolatile memory cell contained in the first memory cell group is different from gate length of the nonvolatile memory cell contained in the second memory cell group. ### Claim 14 (depends on 1) The device according to claim 1, wherein the first memory cell group is arranged adjacent to the selection gate line and gate length of the nonvolatile memory cell contained in the first memory cell group is the same as gate length of the nonvolatile memory cell contained in the second memory cell group. ### Claim 15 (depends on 1) The device according to claim 1, wherein setting value of the threshold voltage is stored in the nonvolatile memory cell. ### Claim 16 (depends on 1) The device according to claim 1, wherein setting value of the threshold voltage are read out before one of the write operation, read operation and erase operation and one of the word line voltage at write verify read time, the word line voltage at erase verify read time and the word line voltage at read time is made variable according to the readout result. ### Claim 17 (depends on 1) The device according to claim 1, wherein the plurality of rewritable nonvolatile memory cells are NAND nonvolatile memory cells. ### Claim 18 A semiconductor integrated circuit device comprising: a semiconductor chip, a first memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, and a second memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, wherein setting of write threshold voltages of the memory cells of the first memory cell group and setting of write threshold voltages of the memory cells of the second memory cell group are made variable, and wherein the write threshold voltage is made variable by making variable word line voltage at verify read time. ### Claim 19 (depends on 18) The device according to claim 18, wherein each of the first and second memory cell groups configures a page. ### Claim 20 (depends on 19) The device according to claim 19, wherein setting value of the threshold voltage are stored in the nonvolatile memory cell. ### Claim 21 (depends on 18) The device according to claim 18, wherein the first and second memory cell groups are each divided into the units which comprise one or a plurality of word lines. ### Claim 22 (depends on 21) The device according to claim 21, wherein setting value of the threshold voltage is stored in the nonvolatile memory cell. ### Claim 23 A semiconductor integrated circuit device comprising: a semiconductor chip, a first memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, and a second memory cell group containing a plurality of rewritable nonvolatile memory cells arranged on the chip, wherein setting of write threshold voltages of the memory cells of the first memory cell group and setting of write threshold voltages of the memory cells of the second memory cell group are made variable, and wherein word line voltage at read time of the first memory cell group and word line voltage at read time of the second memory cell group are made variable. ### Claim 24 (depends on 23) The device according to claim 23, wherein each of the first and second memory cell groups configures a page. ### Claim 25 (depends on 24) The device according to claim 24, wherein setting value of the threshold voltage is stored in the nonvolatile memory cell. ### Claim 26 (depends on 23) The device according to claim 23, wherein the first and second memory cell groups are each divided into the units which comprise one or a plurality of word lines. ### Claim 27 (depends on 26) The device according to claim 26, wherein setting value of the threshold voltage is stored in the nonvolatile memory cell.