# US 7,411,649 B2 · Method for manufacturing a crystal device

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- Number: US 7,411,649 B2
- Document ID: US7411649B2
- Status: Granted
- Kind: B2
- Application number: 11/299,335
- Filed: 2005-12-09
- Published: 2006-06-15
- Granted: 2008-08-12
- Earliest claimed: 2004-12-10
- Assignees: Seiko Epson Corporation
- Inventors: Kazushige Umetsu
- Web page: https://patentgrep.com/patent/US7411649B2

## CPC

- H03H 3/02: for the manufacture of piezoelectric or electrostrictive resonators or networks (H03H3/08 takes precedence)
- B23K 26/0613: {having a common axis (B23K26/0619 takes precedence)}
- B23K 26/40: taking account of the properties of the material involved
- B23K 2103/50: {Inorganic materials other than metals or composite materials}
- H03H 2003/026: {the resonators or networks being of the tuning fork type}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM

## Abstract

A method of manufacturing a crystal device includes applying substantially simultaneously a first light that is absorbed by a crystal plate and excites an energy level of a substance constituting the crystal plate from a ground state to a first excited state, and a second light that excites the energy level of the substance constituting the crystal plate from the first excited state to a second excited state to generate an ablation, thereby forming one or more grooves in a predetermined pattern on the crystal plate.

## Claims

### Claim 1

A method of manufacturing a crystal device comprising applying substantially simultaneously a first light that is absorbed by a crystal plate and excites an energy level of a substance constituting the crystal plate from a ground state to a first excited state, and a second light that excites the energy level of the substance constituting the crystal plate from the first excited state to a second excited state to generate an ablation, thereby forming one or more grooves in a predetermined pattern on the crystal plate.

### Claim 2 (depends on 1)

The method of manufacturing a crystal device according to claim 1,
wherein an area irradiated with the first light is larger than that irradiated with the second light; and
wherein the second light is overlapped within the area irradiated the first light.

### Claim 3 (depends on 2)

The method of manufacturing a crystal device according to claim 2, wherein an ablation is generated within the area where the first light and the second light are overlapped.

### Claim 4 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein the first excited state is a state in which the energy level is excited to a defect level or a conductive band.

### Claim 5 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein the first light is light having a wavelength of no more than 160 nm.

### Claim 6 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein the first light is an F2 laser having a wavelength of 157 nm, and the second light is an ArF excimer laser having a wavelength of 193 nm or a KrF excimer laser having a wavelength of 248 nm.

### Claim 7 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein the first light and/or the second light form an image on a surface to be processed of the crystal plate via an optical imaging system.

### Claim 8 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein the groove pattern consists of one or more stripes.

### Claim 9 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein the groove pattern consists of one or more rectangles.

### Claim 10 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein upon the grooves in the predetermined pattern being formed on two opposing surfaces of the crystal plate, the first light and the second light are overlapped substantially simultaneously on the two opposing surfaces of the crystal plate.

### Claim 11 (depends on 1)

The method of manufacturing a crystal device according to claim 1, wherein the first light and/or the second light are applied to form the predetermined pattern collectively, or separately to each partial region into which the pattern is divided.