# US 7,411,471 B2 · High-frequency switch

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- Number: US 7,411,471 B2
- Document ID: US7411471B2
- Status: Granted
- Kind: B2
- Application number: 11/484,661
- Filed: 2006-07-12
- Published: 2007-07-26
- Granted: 2008-08-12
- Earliest claimed: 2006-01-24
- Assignees: Mitsubishi Electric Corporation
- Inventors: Yoshihiro Tsukahara
- Web page: https://patentgrep.com/patent/US7411471B2

## CPC

- H01P 1/15: by semiconductor devices
- H03H 11/28: Impedance matching networks
- H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)

## Abstract

A high-frequency switch operating in a millimeter wave band that includes a signal path having a λ/4 transmission path, for part of two or more branch signal paths that branch from an input connection path via a branch point; an FET, which is shunt-connected between a grounding end and the branch signal paths that are positioned between the λ/4 transmission path and a terminal end, as viewed from the branch point, and used to connect or disconnect the branch signal paths and the grounding end; an output matching circuit, which is positioned on the branch signal paths that are positioned between a terminal end and a connection point for the FET as viewed from the branch point, and includes a shunt-connected stub; and a matching FET, which is connected between the stub and the grounding end and used to connect or disconnect the stub and the grounding end in accordance with the FET's connection/disconnection.

## Claims

### Claim 1

A switch operating in a millimeter wave band comprising:
a substrate;
a signal path located on the substrate, and including a common path and two or more branch paths that branch from the common path via a branch point, each branch path partly including a transmission path having a length equivalent to one-fourth wavelength of a signal propagating through the branch path;
a switching element shunt-connected between a grounding end and each of the branch paths, the switching element being connected to the branch path at a connection point positioned beyond the transmission path, as viewed from the branch point of the signal path, connecting and disconnecting electrically the branch path and the grounding end in response to a first control signal applied to a control electrode of the switching element;
a matching circuit connected to the branch path beyond the connection point for the switching element, as viewed from the branch point of the signal path, and including a stub shunt-connected to the branch path; and
a matching semiconductor element connected between the stub of the matching circuit and the grounding end, the matching semiconductor element connecting and disconnecting the stub and the grounding end in response to a second control signal applied to a control electrode of the matching semiconductor element in accordance with the connection or disconnection of the branch path and the grounding end by the switching element.

### Claim 2 (depends on 1)

The switch according to claim 1, wherein the control electrode of the switching element and the control electrode of the matching semiconductor element are electrically connected so that the first control signal and the second control signal are identical.

### Claim 3 (depends on 1)

The switch according to claim 1, wherein the control electrode of the switching element and the control electrode of the matching semiconductor element are electrically separated from each other so that the first control signal and the second control signal can be separately applied to the respective control electrodes.

### Claim 4 (depends on 1)

The switch according to claim 1, wherein the switching element and the matching semiconductor element reflected from the group consisting of field-effect transistors and diodes.

### Claim 5 (depends on 4)

The switch according to claim 4, wherein
the switching element and the matching semiconductor element are both field-effect transistors, and
the matching semiconductor element has a smaller gate width than the switching element.

### Claim 6 (depends on 1)

The switch according to claim 1, wherein
the substrate on which the signal path is located is a semiconductor substrate, and
the switching element, the matching circuit, and the matching semiconductor element are located on the semiconductor substrate.