# US 7,411,276 B2 · Photosensitive device

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- Number: US 7,411,276 B2
- Document ID: US7411276B2
- Status: Granted
- Kind: B2
- Application number: 11/514,264
- Filed: 2006-09-01
- Published: 2007-01-04
- Granted: 2008-08-12
- Earliest claimed: 2004-10-14
- Assignees: Powerchip Semiconductor Corp.
- Inventors: Ming-Jeng Huang; Chen-Chiu Hsue
- Web page: https://patentgrep.com/patent/US7411276B2

## CPC

- H10F 39/024: {of coatings or optical elements}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator layer without covering the photoreceiving regions. A flattened dielectric layer is disposed on the conductive patterns and the insulator layer, wherein a surface of the dielectric layer is higher than a surface of the conductive patterns in a range between 2000 Å to 4000 Å.

## Claims

### Claim 1

A photosensitive device, comprising:
a substrate;
at least an insulator layer comprising a plurality of photoreceiving regions disposed on the substrate;
a plurality of conductive patterns disposed on the insulator layer without covering the photoreceiving regions; and
a flattened dielectric layer disposed on the conductive patterns and the insulator layer,
wherein a surface of the dielectric layer is higher than a surface of the conductive patterns in a range between 2000 Å to 4000 Å.

### Claim 2 (depends on 1)

The photosensitive device as claimed in claim 1, wherein the dielectric layer is oxide or oxynitride.

### Claim 3 (depends on 1)

The photosensitive device as claimed in claim 1, wherein the conductive patterns have a thickness of 8000 Å-10000 Å.

### Claim 4 (depends on 1)

The photosensitive device as claimed in claim 1, further comprising a color filter layer on the dielectric layer, an upper dielectric layer on the color filter layer, a plurality of microlenses on the color filter layer, and a protective layer on the microlenses.