# US 7,411,264 B2 · Etch-stop layers for patterning block structures for reducing thermal protrusion

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- Number: US 7,411,264 B2
- Document ID: US7411264B2
- Status: Granted
- Kind: B2
- Application number: 10/991,569
- Filed: 2004-11-18
- Published: 2006-05-18
- Granted: 2008-08-12
- Earliest claimed: 2004-11-18
- Assignees: Seagate Technology LLC
- Inventors: Mallika Kamarajugadda; Michael C. Kautzky; Stacy C. Wakham; David C. Seets; Arun Natarajun
- Web page: https://patentgrep.com/patent/US7411264B2

## CPC

- G11B 5/3163: {Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers}
- G11B 5/1278: {specially adapted for magnetisations perpendicular to the surface of the record carrier}
- G11B 5/3106: {where the integrated or assembled structure comprises means for conditioning against physical detrimental influence, e.g. wear, contamination (G11B5/3133 takes precedence)}
- G11B 5/3133: {including layers not usually being a part of the electromagnetic transducer structure and providing additional features, e.g. for improving heat radiation, reduction of power dissipation, adaptations for measurement or indication of gap depth or other properties of the structure (G11B5/3106 takes precedence)}
- G11B 5/3136: {for reducing the pole-tip-protrusion at the head transducing surface, e.g. caused by thermal expansion of dissimilar materials}
- G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R)

## Abstract

The present invention provides a thin-film structure that includes an etch-stop layer having a first side and a second side, a patterned compensation layer for dissipating thermal energy, and an etch-vulnerable layer, where the etch-stop layer substantially impedes etching. The patterned compensation layer is adjacent the first side of the etch-stop layer, and the etch-vulnerable layer is adjacent the second side of the etch-stop layer.

## Claims

### Claim 1

A thin-film structure comprising:
an etch-stop layer comprising a first side and a second side;
a patterned compensation layer for dissipating thermal energy, wherein the patterned compensation layer adjoins the first side of the etch-stop layer; and
an etch-vulnerable layer adjacent the second side of the etch-stop layer;
wherein the etch-stop layer substantially impedes etching; and
wherein the patterned compensation layer is effective for reducing thermal pole-tip recession/protrusion in the thin-film structure.

### Claim 2 (depends on 1)

The thin-film structure of claim 1, wherein the patterned compensation layer is effective for reducing current-induced pole-tip recession/protrusion in the thin-film structure.

### Claim 3 (depends on 1)

The thin-film structure of claim 1 further comprising a metallic layer formed of a material exhibiting a coefficient of thermal expansion greater than a coefficient of thermal expansion of a material forming the etch-vulnerable layer.

### Claim 4 (depends on 3)

The thin-film structure of claim 3, wherein the etch-vulnerable layer comprises a substrate.

### Claim 5 (depends on 1)

The thin-film structure of claim 1, wherein the etch-vulnerable layer comprises a shield of a transducing head reader.

### Claim 6 (depends on 5)

The thin-film structure of claim 5, wherein the compensation layer dissipates thermal energy away from the etch-vulnerable layer.

### Claim 7

A thin-film structure comprising:
an etch-stop layer comprising a first side and a second side;
a patterned compensation layer for dissipating thermal energy, wherein the patterned compensation layer adjoins the first side of the etch-stop layer; and
an etch-vulnerable layer adjacent the second side of the etch-stop layer;
wherein the etch-stop layer substantially impedes etching; and
wherein the etch-vulnerable layer comprises a pole of a transducing head writer.

### Claim 8 (depends on 7)

The thin-film structure of claim 7 further comprising a transducing head writer core having a conductive coil, wherein the compensation layer is disposed within the transducing head writer core for dissipating thermal energy away from the conductive coil.

### Claim 9 (depends on 8)

The thin-film structure of claim 8, wherein the compensation layer exhibits a coefficient of thermal expansion less than about 6.0×10−6/° C.

### Claim 10 (depends on 1)

The thin-film structure of claim 1, wherein the etch-vulnerable layer comprises a top pole of a transducing head writer.

### Claim 11 (depends on 10)

The thin-film structure of claim 10, wherein the compensation layer dissipates thermal energy away from the etch-vulnerable layer.

### Claim 12 (depends on 1)

The thin-film structure of claim 1, wherein an etch selectivity of the compensation layer to etch-stop layer is about 40:1.

### Claim 13 (depends on 1)

The thin-film structure of claim 1, wherein the compensation layer exhibits a thermal conductivity of at least about 1.5 W/m-K.

### Claim 14 (depends on 13)

The thin-film structure of claim 13, wherein the etch-stop layer exhibits a thermal conductivity of at least about 1.5 W/m-K.

### Claim 15 (depends on 1)

The thin-film structure of claim 1, wherein the etch-stop layer comprises at least one of chromium, nickel, iron, copper, platinum, palladium, aluminum, gold, ruthenium, carbides thereof, nitrides thereof, oxides thereof, and combinations thereof.

### Claim 16

A thin-film structure comprising:
a compensation layer patterned by etching and comprising a first side and a second side, wherein the compensation layer dissipates thermal energy from a metallic layer disposed adjacent the first side of the compensation layer; and
an etch-stop layer comprising a first side and a second side, wherein the first side of the etch-stop layer adjoins the second side of the compensation layer for protecting an etch-vulnerable layer from etching while the compensation layer is being patterned, and wherein the etch-vulnerable layer is disposed adjacent the second side of the etch-stop layer.

### Claim 17 (depends on 16)

The thin-film structure of claim 16, wherein the etch-vulnerable layer comprises a substrate.

### Claim 18 (depends on 16)

The thin-film structure of claim 16, wherein the etch-vulnerable layer comprises a shield of a transducing head reader.

### Claim 19 (depends on 16)

The thin-film structure of claim 16, wherein the etch-vulnerable layer comprises a pole of a transducing head writer.

### Claim 20 (depends on 16)

The thin-film structure of claim 16, wherein the etch-vulnerable layer comprises a top pole of a transducing head writer.

### Claim 21 (depends on 16)

The thin-film structure of claim 16, wherein an etch selectivity of the compensation layer to etch-stop layer is about 40:1.

### Claim 22 (depends on 16)

The thin-film structure of claim 16, wherein the compensation layer exhibits a thermal conductivity of at least about 1.5 W/m-K.

### Claim 23 (depends on 22)

The thin-film structure of claim 22, wherein the etch-stop layer exhibits a thermal conductivity of at least about 1.5 W/m-K.