# US 7,411,249 B1 · Lateral high-voltage transistor with vertically-extended voltage-equalized drift region

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- Number: US 7,411,249 B1
- Document ID: US7411249B1
- Status: Granted
- Kind: B1
- Application number: 11/272,437
- Filed: 2005-11-09
- Granted: 2008-08-12
- Earliest claimed: 2004-11-09
- Inventors: Richard A. Blanchard
- Web page: https://patentgrep.com/patent/US7411249B1

## CPC

- H10D 30/65: Lateral DMOS [LDMOS] FETs
- H10D 8/411: {PN diodes having planar bodies}
- H10D 30/657: {having substrates comprising insulating layers, e.g. SOI-LDMOS transistors}
- H10D 62/371: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current}
- H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates}
- H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs}
- H10D 62/156: {Drain regions of DMOS transistors}
- H10D 62/157: {Impurity concentrations or distributions}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A lateral high-voltage device in which conductive trench plates are inserted across the voltage-withstand region, so that, in the on state, the current density vectors have less convergence. This can help reduce on-resistance.

## Claims

### Claim 1

A lateral semiconductor device, comprising:
a carrier-emission structure, which emits carriers when the device is in an ON state; and
a voltage-withstand structure, through which carriers pass when the device is in the ON state, but which blocks voltage when the device is in the OFF state;
wherein said voltage-withstand structure includes first and second conductive trench electrodes separated by a volume of semiconductor material , said trench electrodes each providing substantially equal potential across a respective face of said voltage-withstand structure;
and wherein said carriers emitted by said carrier-emission structure pass through said first and second conductive trench electrodes.

### Claim 2 (depends on 1)

The device of claim 1, wherein said voltage-withstand structure extends along a lateral direction of predominant current vector, and said trench electrodes extend both in depth and also laterally normal to said current vector.

### Claim 3 (depends on 1)

The device of claim 1, wherein said carrier-emission structure includes an anode and a semiconductor diffusion abutting said anode.

### Claim 4 (depends on 1)

The device of claim 1, wherein said carrier-emission structure includes a source diffusion, a semiconductor channel which abuts said source diffusion, and a gate which is capacitively coupled to said channel.

### Claim 5 (depends on 1)

The device of claim 1, further comprising an electrical contact which receives carriers emitted by said carrier-emission structure, after said carriers have passed through said voltage-withstand region.

### Claim 6 (depends on 1)

The device of claim 1, further comprising third and fourth trench electrodes which adjoin said semiconductor volume and are insulated from it.

### Claim 7

A lateral semiconductor device, comprsing:
a carrier-emission structure; and
a voltage-withstand structure, though which carriers emitted by said carrier-emission structure can pass, said voltage-withstand structure includes first and second conductive trench electrodes separated by a volume of semiconductor material; and
wherein said voltage-withstand structure extends along a lateral direction of predominant current vector, and said trench electrodes extend both in depth and also laterally normal to said current vector.