# US 7,411,170 B2 · Photoelectric-conversion apparatus and image-pickup system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,411,170 B2 - Document ID: US7411170B2 - Status: Granted - Kind: B2 - Application number: 11/835,009 - Filed: 2007-08-07 - Published: 2008-03-06 - Granted: 2008-08-12 - Earliest claimed: 2006-08-31 - Assignees: Canon Kabushiki Kaisha - Inventors: Mineo Shimotsusa; Shigeru Nishimura; Shunsuke Takimoto - Web page: https://patentgrep.com/patent/US7411170B2 ## CPC - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole. ## Claims ### Claim 1 A photoelectric-conversion apparatus comprising: a photoelectric-conversion area having a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges; a plurality of floating-diffusion areas; a plurality of transfer-MOS transistors configured to transfer electrical charges of said photoelectric-conversion element to said floating-diffusion area; a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line; and an antireflection film provided on a light-receiving surface of said photoelectric-conversion element and a plurality of wiring layers, wherein one gate of said amplification-MOS transistor is electrically connected to one floating-diffusion area by one conductor provided in a single contact hole, where the electrical connection is not via said plurality of wiring layers, and wherein said anti-reflection film is provided, so as to cover at least a part of each of an upper part of said floating-diffusion area and an upper part of the gate of said amplification-MOS transistor except a base part of said contact hole. ### Claim 2 (depends on 1) The photoelectric-conversion apparatus according to claim 1, further comprising a peripheral-circuit area where a second MOS transistor is provided, said second MOS transistor being configured to perform at least one of driving of said MOS transistors provided on said photoelectric-conversion area and amplification of a signal read from said photoelectric-conversion area, wherein an impurity density of a source and a drain of said MOS transistor provided on said photoelectric-conversion area is lower than an impurity density of a source and a drain of said second MOS transistor provided on said peripheral-circuit area. ### Claim 3 (depends on 1) The photoelectric-conversion apparatus according to claim 1, wherein said antireflection film is provided, so as not to cover the base part of a contact hole provided in said photoelectric-conversion area. ### Claim 4 (depends on 1) The photoelectric-conversion apparatus according to claim 1, wherein said antireflection film is provided, so as not to cover at least a part of an element-isolation area provided on said photoelectric-conversion area. ### Claim 5 (depends on 1) The photoelectric-conversion apparatus according to claim 1, wherein said antireflection film is provided, so as to cover an entire face of said photoelectric-conversion area except the base part of a contact hole provided in said photoelectric-conversion area and at least a part of an element-isolation area provided on said photoelectric-conversion area. ### Claim 6 (depends on 2) The photoelectric-conversion apparatus according to claim 2, wherein a side spacer is formed at a gate of said second MOS transistor provided on said peripheral-circuit area and no side spacer is formed for said MOS transistors provided on said photoelectric-conversion area, and wherein at least a part of said side spacer of said second MOS transistor provided on said peripheral-circuit area is formed by using the same film as said antireflection film. ### Claim 7 (depends on 1) The photoelectric-conversion apparatus according to claim 1, wherein said antireflection film is a silicon-nitride film including hydrogen. ### Claim 8 (depends on 1) The photoelectric-conversion apparatus according to claim 1, comprising: a transfer-MOS transistor for each of said photoelectric-conversion elements; and an amplification transistor shared between at least two of said photoelectric-conversion elements. ### Claim 9 (depends on 1) An image-pickup system comprising: the photoelectric-conversion apparatus according to claim 1; an optical system configured to form an image of light onto said photoelectric-conversion apparatus; and a signal-processing circuit configured to process a signal externally transmitted from said photoelectric-conversion apparatus.