# US 7,410,888 B2 · Method for manufacturing strained silicon

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- Number: US 7,410,888 B2
- Document ID: US7410888B2
- Status: Granted
- Kind: B2
- Application number: 11/027,512
- Filed: 2004-12-30
- Published: 2006-07-06
- Granted: 2008-08-12
- Earliest claimed: 2004-12-30
- Assignees: Texas Instruments Incorporated
- Inventors: Richard L. Knipe; Grady L. Endsley
- Web page: https://patentgrep.com/patent/US7410888B2

## CPC

- H10P 14/3411: {Silicon, silicon germanium or germanium}
- C30B 29/06: Silicon
- C30B 33/00: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
- H10P 14/2905: {Silicon, silicon germanium or germanium}
- H10P 14/2925: {Surface structures}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.

## Claims

### Claim 1

A method for manufacturing strained silicon, comprising:
bending a silicon wafer against a curved surface of a platen such that a curvature is induced in the silicon wafer;
depositing an epitaxial layer of silicon upon an upper surface of the silicon layer while the silicon wafer is under the induced curvature, wherein the curvature is induced by bending the silicon wafer between the curved surface of the platen and a vacuum chuck; and
releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer wherein the strain induced the epitaxial layer is related to the curvature induced in the silicon wafer by Stoney's Equation.

### Claim 2 (depends on 1)

The method of claim 1, wherein the strain is compressive.

### Claim 3 (depends on 1)

The method of claim 1, wherein the strain is tensile.

### Claim 4 (depends on 1)

The method of claim 1, wherein the platen has a convex upper surface.

### Claim 5 (depends on 1)

The method of claim 1, wherein the platen has a concave upper surface.