# US 7,410,865 B2 · Method for fabricating capacitor of semiconductor device

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- Number: US 7,410,865 B2
- Document ID: US7410865B2
- Status: Granted
- Kind: B2
- Application number: 11/269,095
- Filed: 2005-11-08
- Published: 2007-01-04
- Granted: 2008-08-12
- Earliest claimed: 2005-06-30
- Assignees: Hynix Semiconductor Inc.
- Inventors: Soo Jae Lee
- Web page: https://patentgrep.com/patent/US7410865B2

## CPC

- H01G 4/33: Thin- or thick-film capacitors {(thin- or thick-film circuits; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor)}
- H01G 4/228: Terminals
- H10P 70/23: {during, before or after processing of insulating materials}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed herein is a method for fabricating a capacitor of a semiconductor device. The method comprises the steps of forming an interlayer insulating film on a semiconductor substrate, forming contact plugs connected to the semiconductor substrate though the interlayer insulating film, forming a first storage node oxide film include a PSG film on the contact plugs, cleaning the semiconductor substrate on which the first storage node oxide film include a PSG film is formed, using isopropyl alcohol (IPA), to remove water-soluble compounds, and forming a second storage node oxide film on the first storage node oxide film.

## Claims

### Claim 1

A method for fabricating a capacitor of a semiconductor device, comprising:
forming an interlayer insulating film on a semiconductor substrate;
forming contact plugs connected to the semiconductor substrate through the interlayer insulating film;
forming a first storage node oxide film including a phosphorous silicate glass (PSG) film on the contact plugs;
cleaning the semiconductor substrate on which the first storage node oxide film is formed with isopropyl alcohol (IPA), thereby removing water-soluble compounds formed by a reaction between moisture and out-diffused phosphorous from the PSG film; and
forming a second storage node oxide film on the first storage node oxide film after cleaning the semiconductor substrate with isopropyl alcohol.

### Claim 2 (depends on 1)

The method according to claim 1, wherein, in cleaning with isopropyl alcohol, reaction products between the isopropyl alcohol and the water-soluble compounds are removed by gravity.

### Claim 3 (depends on 1)

The method according to claim 1, wherein, in cleaning with isopropyl alcohol, reaction products between the isopropyl alcohol and the water-soluble compounds are removed by using a rotational force.