# US 7,410,827 B2 · Semiconductor device and method of fabricating the same, circuit board, and electronic instrument > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,410,827 B2 - Document ID: US7410827B2 - Status: Granted - Kind: B2 - Application number: 11/331,028 - Filed: 2006-01-13 - Published: 2006-06-01 - Granted: 2008-08-12 - Earliest claimed: 2003-07-04 - Assignees: Seiko Epson Corporation - Inventors: Yoshiharu Ogata - Web page: https://patentgrep.com/patent/US7410827B2 ## CPC - H10W 90/00: Package configurations - H10W 72/07141: {Means for applying energy, e.g. ovens or lasers} - H10W 72/073: {of die-attach connectors} - H10W 72/07327: {involving guiding structures, e.g. spacers or supporting members} - H10W 72/07337: {using a polymer adhesive, e.g. an adhesive based on silicone or epoxy} - H10W 72/07353: {changes in shapes} - H10W 72/075: {of bond wires} - H10W 72/07521: {Aligning} - H10W 72/07533: {Ultrasonic bonding, e.g. thermosonic bonding} - H10W 72/334: {Cross-sectional shape, i.e. in side view} - H10W 72/354: {comprising polymers} - H10W 72/536: {the connected ends being ball-shaped} - H10W 72/5363: {the connected ends being wedge-shaped} - H10W 72/5522: {comprising gold [Au]} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/884: {Die-attach connectors and bond wires} - H10W 72/931: {Shapes of bond pads} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W 74/00: Encapsulations, e.g. protective coatings - H10W 74/117: {the substrate having spherical bumps for external connection} - H10W 90/26: the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape - H10W 90/722: {between stacked chips} - H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W 99/00: Subject matter not provided for in other groups of this subclass - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A method of fabricating a semiconductor device, including: preparing a wiring board on which is mounted a first semiconductor chip having a plurality of first pads; electrically connecting each of the first pads to an interconnecting pattern of the first semiconductor chip by a wire; providing resin paste on the first semiconductor chip; mounting a second semiconductor chip having a plurality of second pads on the first semiconductor chip with the resin paste interposed therebetween; and forming a spacer by hardening the resin paste to fix the first and second semiconductor chips together, wherein the spacer is formed to extend under the second pads and further outward; and wherein the highest portion of the wire is disposed on the outer side of the first semiconductor chip. ## Claims ### Claim 1 A method of fabricating a semiconductor device, comprising: preparing a wiring board having an interconnecting pattern and mounting a first semiconductor chip on the wiring board, a surface of the first semiconductor chip having a first portion and a second portion and a first pad positioned on the first portion; electrically connecting the first pad to the interconnecting pattern by a wire; providing resin paste on the second portion of the surface of the first semiconductor chip so as not to deposit the resin paste on the first portion: mounting a second semiconductor chip having a second pad on the first semiconductor chip with the resin paste interposed between the first and the second semiconductor chips such that at least part of the first pad is covered by the second semiconductor chip with a space between the first and the second semiconductor chips; and forming a spacer by hardening the resin paste between the first and the second semiconductor chips to fix the first and the second semiconductor chips together, the spacer being formed to extend under the second pad and further outward, wherein a highest portion of the wire is disposed on an outer side of the first semiconductor chip. ### Claim 2 (depends on 1) The method of fabricating a semiconductor device as defined in claim 1, the electrically connecting the first pad to the interconnecting pattern including electrically connecting the wire to the interconnecting pattern first and then electrically connecting the wire to the first pad. ### Claim 3 (depends on 1) The method of fabricating a semiconductor device as defined in claim 1, further comprising: electrically connecting the second pad to the interconnecting pattern by another wire, after hardening the resin paste. ### Claim 4 (depends on 1) The method of fabricating a semiconductor device as defined in claim 1, the semiconductor chip including an integrated circuit which overlaps with the first portion and does not overlap with the first pad. ### Claim 5 (depends on 1) The method of fabricating a semiconductor device as defined in claim 1, further comprising: forming a sealing portion on the wiring board so as to seal the first and the second semiconductor chips, a space between the first and the second semiconductor chips being filled with at least a part of the sealing portion and the spacer. ### Claim 6 (depends on 1) The method of fabricating a semiconductor device as defined in claim 1, the entire spacer being positioned between the first and second semiconductor chips. ### Claim 7 (depends on 1) The method of fabricating a semiconductor device as defined in claim 1, the mounting the second semiconductor chip including controlling a pressure applied to the second semiconductor chip. ### Claim 8 A method of fabricating a semiconductor device, the method comprising: preparing a wiring board having an interconnecting pattern and mounting a first semiconductor chip on the wiring board, a surface of the first semiconductor chip having a first portion and second portion, and a first pad positioned on the first portion; electrically connecting the first pad to the interconnecting pattern by a wire; providing resin paste on the second portion of the surface of the first semiconductor chip so as not to deposit the resin paste on the first portion; mounting a second semiconductor chip having a second pad on the first semiconductor chip with the resin paste interposed between the first and the second semiconductor chips such that at least part of the first pad is covered by the second semiconductor chip with a space between the first and the second semiconductor chips; and forming a spacer by hardening the resin paste between the first and the second semiconductor chips to fix the first and the second semiconductor chips together, the spacer being formed to extend under the second pad and further outward, wherein the wire protrudes diagonally upward from a space above the first semiconductor chip. ### Claim 9 (depends on 8) The method of fabricating a semiconductor device as defined in claim 8, the electrically connecting the first pad to the interconnecting pattern including electrically connecting the wire to the interconnecting pattern and then electrically connecting the wire to the first pad. ### Claim 10 (depends on 8) The method of fabricating a semiconductor device as defined in claim 8, further comprising: electrically connecting the second pad to the interconnecting pattern by another wire, after hardening the resin paste. ### Claim 11 (depends on 8) The method of fabricating a semiconductor device as defined in claim 8, the mounting the second semiconductor chip including controlling a pressure applied to the second semiconductor chip. ### Claim 12 (depends on 1) The method of fabricating a semiconductor device as defined in claim 1, wherein a height of the resin paste from the wiring board to a top surface of the resin paste is larger than a height of a highest portion of the wire from the wiring board before the step of mounting the second semiconductor chip. ### Claim 13 (depends on 8) The method of fabricating a semiconductor device as defined in claim 8, wherein a height of the resin paste from the wiring board to a top surface of the resin paste is larger than a height of a highest portion of the wire from the wiring board before the step of mounting the second semiconductor chip.