# US 7,410,823 B2 · Image sensors for reducing dark current and methods of manufacturing the same

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- Number: US 7,410,823 B2
- Document ID: US7410823B2
- Status: Granted
- Kind: B2
- Application number: 11/707,897
- Filed: 2007-02-20
- Published: 2007-09-06
- Granted: 2008-08-12
- Earliest claimed: 2004-06-04
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Jongcheol Shin
- Web page: https://patentgrep.com/patent/US7410823B2

## CPC

- H10F 39/014: {of CMOS image sensors}
- H10F 39/80: {Constructional details of image sensors}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over the photodiode region, and a transfer gate located over the surface of the substrate adjacent the HAD region. The image sensor further includes a first channel region of the first conductivity type located in the substrate and aligned below the transfer gate, a second channel region of the second conductivity type located in the substrate between said transfer gate and the first channel region, and an floating diffusion region which is located in the substrate and which electrically contacts the second channel region.

## Claims

### Claim 1

A method of manufacturing an image sensor, comprising:
implanting impurities of a first conductivity type in a substrate of the first conductivity type to define a first channel region which extends to a first depth from a surface of the substrate;
implanting impurities of a second conductivity type in the substrate surface to define a second channel region which is located over the first channel region and extends to a second depth from the substrate surface, wherein the first depth is greater than the second depth;
forming a transfer gate electrode over the substrate surface and over the first and second channel regions;
implanting impurities of the first conductivity type in the substrate to define a hole accumulated device (HAD) region which extends to a third depth from the substrate surface and which is adjacent the gate electrode;
implanting impurities of the second conductivity type in the substrate to define a photodiode region which is buried in the substrate and extends to a fourth depth from substrate surface, wherein the fourth depth is greater than the third depth;
implanting impurities of the second conductivity type in the substrate to define a diffusion region which electrically contacts the second channel region,
wherein the HAD region is located over the photodiode region, and wherein the impurities of the HAD region are implanted prior to the impurities of the photodiode region.

### Claim 2 (depends on 1)

The method of claim 1, wherein said diffusion region has a higher impurity concentration than said second channel region.

### Claim 3 (depends on 1)

The method of claim 1, wherein the image sensor is a CMOS image sensor, and wherein diffusion region is a floating diffusion region of the CMOS image sensor.

### Claim 4

A method of manufacturing an image sensor, comprising:
implanting impurities of a first conductivity type in a substrate of the first conductivity type to define a first channel region which extends to a first depth from a surface of the substrate;
implanting impurities of a second conductivity type in the substrate surface to define a second channel region which is located over the first channel region and extends to a second depth from the substrate wherein the first depth is greater than the second depth;
forming a transfer gate electrode over the substrate surface and over the first and second channel regions;
implanting impurities of the first conductivity type in the substrate to define a hole accumulated device (HAD) region which extends to a third depth from the substrate surface and which is adjacent the gate electrode;
implanting impurities of the second conductivity type in the substrate to define a photodiode region which is buried in the substrate and extends to a fourth depth from substarte surface, wherein the fourth depth is greater than the third depth;
implanting impurities of the second conductivity type in the substrate to define a diffusion region which electrically contacts the second channel region,
wherein the HAD region is located over the photodiode region, and
wherein the image sensor is a CCD image sensor, and wherein the diffusion region is a buried channel charge coupled device (BCCD) region of the CCD image sensor.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first conductivity type is a P conductivity type and the second conductivity type is an N conductivity type.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first conductivity type is N conductivity type and the second conductivity type is a P conductivity type.