# US 7,410,819 B2 · Nitride semiconductor light-emitting device and method for producing same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,410,819 B2
- Document ID: US7410819B2
- Status: Granted
- Kind: B2
- Application number: 11/296,532
- Filed: 2005-12-08
- Published: 2006-06-22
- Granted: 2008-08-12
- Earliest claimed: 2004-12-08
- Assignees: Sharp Kabushiki Kaisha
- Inventors: Teruyoshi Takakura; Shigetoshi Ito; Takeshi Kamikawa
- Web page: https://patentgrep.com/patent/US7410819B2

## CPC

- H01S 5/34333: {with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01S 5/320225: {polar orientation}
- H01S 5/0202: {Cleaving}
- H01S 5/0207: {Substrates having a special shape}
- H01S 5/0211: {Substrates made of ternary or quaternary compounds}
- H01S 5/04254: {characterised by the shape}
- H01S 5/2201: {in a specific crystallographic orientation}
- H01S 5/2214: {based on oxides or nitrides}
- H01S 2301/176: Specific passivation layers on surfaces other than the emission facet
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

## Claims

### Claim 1

A method for producing a nitride semiconductor light-emitting device comprising the steps of:
preparing a nitride semiconductor substrate having stripe groove portions;
forming an underlying layer comprising nitride semiconductor on the nitride semiconductor substrate including side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to a surface of the substrate; and
sequentially forming, over the underlying layer, a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al.

### Claim 2 (depends on 1)

The method for producing a nitride semiconductor light-emitting device according to claim 1, wherein a composition ratio of Al in the underlying layer is lower than a composition ratio of Al in the lower cladding layer.

### Claim 3 (depends on 2)

The method for producing a nitride semiconductor light-emitting device according to claim 2, wherein the composition ratio of Al in the underlying layer is 5% or lower.

### Claim 4 (depends on 1)

The method for producing a nitride semiconductor light-emitting device according to claim 1, wherein the underlying layer comprises GaN.

### Claim 5 (depends on 1)

The method for producing a nitride semiconductor light-emitting device according to claim 1, wherein the crystal surface comprises a {11-22} surface.

### Claim 6 (depends on 1)

The method for producing a nitride semiconductor light-emitting device according to claim 1, wherein thickness of the underlying layer is from 0.01 μm to 2 μm.

### Claim 7 (depends on 1)

The method for producing a nitride semiconductor light-emitting device according to claim 1, wherein depth of each of the groove portions is from 0.5 μm to 20 μm.

### Claim 8 (depends on 1)

The method for producing a nitride semiconductor light-emitting device according to claim 1, wherein width of each of the groove portions is from 5 μm to 100 μm.