# US 7,410,508 B2 · Apparatus for crystallizing semiconductor with laser beams

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- Number: US 7,410,508 B2
- Document ID: US7410508B2
- Status: Granted
- Kind: B2
- Application number: 11/147,879
- Filed: 2005-06-08
- Published: 2005-10-13
- Granted: 2008-08-12
- Earliest claimed: 2002-05-17
- Assignees: Sharp Kabushiki Kaisha; Japan Laser Corporation
- Inventors: Nobuo Sasaki; Tatsuya Uzuka
- Web page: https://patentgrep.com/patent/US7410508B2

## CPC

- H10P 14/3814: {Continuous wave laser beam}
- B23K 26/067: Dividing the beam into multiple beams, e.g. multi-focusing
- B23K 26/0676: {into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations}
- B23K 26/08: Devices involving relative movement between laser beam and workpiece
- B23K 26/0884: {in at least three axial directions, e.g. manipulators, robots}
- C30B 13/24: using electromagnetic waves
- C30B 35/00: Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- G02B 19/0014: {at least one surface having optical power}
- G02B 19/0057: {in the form of a laser diode array, e.g. laser diode bar (semiconductor laser arrays with beam combining arrangement H01S5/4012)}
- G02B 27/144: {using partially transparent surfaces without spectral selectivity (G02B27/147 takes precedence)}
- G02B 27/145: {having sequential partially reflecting surfaces}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/382: {Scanning of a beam}
- B23K 2101/006: {Vehicles}
- B23K 2101/40: Semiconductor devices
- H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 86/0229: {characterised by control of the annealing or irradiation parameters}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

## Claims

### Claim 1

An apparatus for crystallizing a semiconductor, comprising:
a laser source;
a stage for supporting a substrate including an amorphous semiconductor;
an optical focussing system; and
said stage comprising first stage members disposed in parallel and movable synchronously in a first direction, a second stage member disposed above the first stage members and movable in a second direction perpendicular to the first direction, and a third stage member rotatably disposed above the second stage member, whereby a laser beam emitted by the laser source is irradiated onto a semiconductor on a substrate fixed to the third stage member through the optical focussing system to melt and crystallize the semiconductor,
wherein the second stage member has a stroke of movement having a longer range than that of the first stage member.

### Claim 2 (depends on 1)

The apparatus according to claim 1, wherein:
said laser source is a continuous wave laser oscillator; and
said focusing optical system irradiates said laser beam on said semiconductor with a laser spot.

### Claim 3 (depends on 1)

The apparatus according to claim 1, wherein said third stage member is rotatable within an angular range of 110 degrees.

### Claim 4 (depends on 1)

The apparatus according to claim 1, wherein said second stage member is supported by said first stage members.

### Claim 5 (depends on 1)

The apparatus according to claim 1, wherein said second stage member is movable at a higher speed than said first stage members.