# US 7,410,409 B1 · Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,410,409 B1 - Document ID: US7410409B1 - Status: Granted - Kind: B1 - Application number: 10/018,188 - Filed: 2000-06-15 - Granted: 2008-08-12 - Earliest claimed: 1999-06-18 - Assignees: Hitachi Chemical Company, Ltd. - Inventors: Naoyuki Koyama; Kouji Haga; Masato Yoshida; Keizou Hirai; Toranosuke Ashizawa; Youiti Machii - Web page: https://patentgrep.com/patent/US7410409B1 ## CPC - H10P 95/062: {involving a dielectric removal step} - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)} - C09K 3/1463: {Aqueous liquid suspensions} - H10P 52/402: {of semiconductor materials} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE ## Abstract The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water. ## Claims ### Claim 1 A CMP abrasive consisting essentially of cerium oxide particles, a dispersant, water, and, additionally, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of said film to be polished, wherein the organic polymer is a compound containing at least one atom having an unpaired electron in a molecular structure, and wherein the abrasive is capable of being used in forming shallow trench isolation, and is adapted to polish an inorganic insulating film having unevenness on a surface thereof. ### Claim 2 (depends on 1) The CMP abrasive according to claim 1, wherein said organic polymer is a compound containing either one or both of a nitrogen atom and an oxygen atom in a molecular structure. ### Claim 3 (depends on 1) The CMP abrasive according to claim 1, wherein said organic polymer is a compound having an adsorption ratio of 50% or more with respect to silicon oxide particles of a specific surface area of 50 m2/g dispersed in water of pH 6 to 8. ### Claim 4 (depends on 1) The CMP abrasive according to claim 1, wherein said organic polymer is a compound having an adsorption ratio of 40% or more with respect to silicon nitride particles of a specific surface area of 3.3 m2/g dispersed in water of pH 6 to 8. ### Claim 5 (depends on 1) The CMP abrasive according to claim 1, wherein the sedimentation speed of the cerium oxide particles is 20 μm/s or less. ### Claim 6 (depends on 1) The CMP abrasive according to claim 1, wherein said organic polymer is polyvinyl pyrrolidone. ### Claim 7 (depends on 6) The CMP abrasive according to claim 6, wherein said polyvinyl pyrrolidone has a weight average molecular weight of 5,000 to 1,200,000. ### Claim 8 (depends on 1) The CMP abrasive according to claim 1, which comprises 0.01 to 2.0 parts by weight of a dispersant and 0.001 to 1,000 parts by weight of an organic polymer based on the cerium oxide particle of 100 parts by weight, and the rest comprising water, the concentration of the cerium oxide particles in the abrasive being 0.5 to 20% by weight. ### Claim 9 (depends on 1) A method for polishing a substrate comprising polishing by moving a substrate on which an inorganic insulating film having unevenness on a surface thereof, to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying said CMP abrasive for polishing the inorganic insulating film having unevenness on a surface thereof according to claim 1, between the inorganic insulating film to be polished and the polishing cloth. ### Claim 10 (depends on 1) A method for manufacturing a semiconductor device comprising a step of polishing an inorganic insulating film having unevenness on a surface thereof, to be polished, by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying said CMP abrasive for polishing an inorganic insulating film having unevenness on a surface thereof according to claim 1, between the inorganic insulating film to be polished and the polishing cloth. ### Claim 11 (depends on 1) The CMP abrasive according to claim 1, wherein said dispersant is selected from the group consisting of water-soluble anionic dispersants, water-soluble nonionic dispersants, water-soluble cationic dispersants and water-soluble amphoteric dispersants. ### Claim 12 (depends on 1) The CMP abrasive according to claim 1, wherein said organic polymer is included in an amount of 0.01 part by weight to 100 parts by weight, based on 100 parts by weight of cerium oxide particles. ### Claim 13 (depends on 1) The CMP abrasive according to claim 1, consisting of the cerium oxide particles, the dispersant, water and the organic polymer. ### Claim 14 (depends on 1) The CMP abrasive according to claim 1, wherein the cerium oxide particles have an average particle diameter of 0.01 μm to 1.0 μm. ### Claim 15 (depends on 1) The CMP abrasive according to claim 1, wherein said organic polymer is selected from the group consisting of poly (meth) acrylic acid ammonium salts. ### Claim 16 (depends on 1) The CMP abrasive according to claim 1, wherein said organic polymer is selected from the group consisting of poly (meth) acrylic acid derivatives. ### Claim 17 (depends on 1) The CMP abrasive according to claim 1, wherein said CMP abrasive is adapted to polish an oxide insulating film having unevenness on a surface thereof. ### Claim 18 (depends on 17) The CMP abrasive according to claim 17, wherein said CMP abrasive is adapted to polish a silicon oxide insulating film having unevenness on a surface thereof. ### Claim 19 (depends on 1) The CMP abrasive according to claim 1, wherein said CMP abrasive is adapted to polish a silicon oxide film having unevenness on a surface thereof.