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US 7,408,412 B2Granted
Power amplifier and wireless communication device
AssigneeMitsubishi Electric Corporation
InventorsKazuya Yamamoto, Tomoyuki Asada
Life of this patent
Estimating the term…
Abstract
There are provided a power amplifying transistor, a bias circuit which supplies a bias current to the base of the power amplifying transistor, a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor, and a control circuit which, when the peak value of the collector voltage becomes higher than a voltage set in advance, controls the bias circuit to increase the bias current.
Claims7
A power amplifier comprising:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor;
- and
- a control circuit which, when the peak value of the collector voltage becomes higher than a voltage set in advance, controls the bias circuit to increase the bias current.
2 more elements
A power amplifier comprising:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor;
- and
- a control circuit which raises a load curve of the power amplifying transistor when the peak value of the collector voltage becomes higher than a voltage set in advance.
2 more elements
A wireless communication device comprising:
- an antenna terminal for performing transmission and reception of signals;
- a baseband signal processing section which demodulates and decodes a received signal, and which encodes and modulates a signal to be transmitted;
- an RF circuit which converts a signal output from the baseband signal processing section into a signal of a predetermined frequency;
- and
- a power amplifier which amplifies a signal output from the RF circuit, the power amplifier having:
- a power amplifying transistor;
- a bias circuit which supplies a bias current to the base of the power amplifying transistor;
- a current mirror circuit which detects a peak value of the collector voltage of the power amplifying transistor;
- and
- a control circuit which, when the peak value from the current mirror circuit becomes higher than a voltage set in advance, controls the baseband signal processing section to reduce the power of the signal input from the RF circuit to the power amplifier.
7 more elements
Dependencies are inferred from the claim text.