# US 7,408,217 B2 · Metal-insulator transition switching transistor and method for manufacturing the same

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- Number: US 7,408,217 B2
- Document ID: US7408217B2
- Status: Granted
- Kind: B2
- Application number: 10/576,579
- Filed: 2004-04-01
- Published: 2007-03-29
- Granted: 2008-08-05
- Earliest claimed: 2004-04-01
- Assignees: Electronics and Telecommunications Research Institute
- Inventors: Doo Hyeb Yoon; Hyun Tak Kim; Byung Gyu Chae; Kwang Yong Kang; Sung Lyul Maeng
- Web page: https://patentgrep.com/patent/US7408217B2

## CPC

- H10N 99/03: {Devices using Mott metal-insulator transition, e.g. field-effect transistor-like devices}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.

## Claims

### Claim 1

A metal-insulator transition switching transistor, comprising:
a silicon substrate;
a gate electrode formed directly on the substrate;
a gate insulation film on the gate electrode and the silicon substrate;
an abrupt metal-insulator-transition channel layer on the gate insulation film, wherein the abrupt metal-insulator-transition channel layer changes from an insulator phase to a metal phase abruptly, or vice versa, depending on a variation of an electric field; and
a source and a drain being contacted with both sides of the abrupt metal-insulator-transition channel layer, respectively.

### Claim 2 (depends on 1)

The metal-insulator-transition switching transistor as claimed in claim 1, wherein the substrate is made of silicon.

### Claim 3 (depends on 1)

The metal-insulator-transition switching transistor as claimed in claim 1, wherein the source and the drain is a double layer constituted by materials selected from the group consisting of either a chrome (Cr) layer and a gold (Au) layer or a tungsten (W) layer and a titanium (Ti) layer.

### Claim 4 (depends on 1)

The metal-insulator-transition switching transistor as claimed in claim 1, wherein the abrupt metal-insulator-transition channel layer is composed of a vanadium dioxide (VO2) thin film.