# US 7,408,208 B2 · III-nitride power semiconductor device

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- Number: US 7,408,208 B2
- Document ID: US7408208B2
- Status: Granted
- Kind: B2
- Application number: 11/725,430
- Filed: 2007-03-19
- Published: 2008-03-20
- Granted: 2008-08-05
- Earliest claimed: 2006-03-20
- Assignees: International Rectifier Corporation
- Inventors: Thomas Herman
- Web page: https://patentgrep.com/patent/US7408208B2

## CPC

- H10D 62/109: {Reduced surface field [RESURF] PN junction structures}
- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10D 30/6738: {Schottky barrier electrodes}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H10D 62/85: being Group III-V materials, e.g. GaAs
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D 64/64: Electrodes comprising a Schottky barrier to a semiconductor
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A III-nitride power semiconductor device that includes a two dimensional electron gas having a low field region under the gate thereof.

## Claims

### Claim 1

A power semiconductor device, comprising:
a III-nitride heterojunction body that includes a first III-nitride body and a second III-nitride body having a different band gap than that of said first III-nitride body;
a first power electrode coupled to said second III-nitride body;
a second power electrode coupled to said second III-nitride body;
a gate arrangement disposed between said first and said second power electrodes; and
a conductive channel that includes a two-dimensional electron gas that in a conductive state includes a low field region under said gate arrangement that is at least twice as wide as said gate arrangement and less conductive than its adjacent regions.

### Claim 2 (depends on 1)

The power semiconductor device of claim 1, wherein said gate arrangement includes a gate insulation body.

### Claim 3 (depends on 1)

The power semiconductor device of claim 1, wherein said gate arrangement includes a schottky body.

### Claim 4 (depends on 1)

The power semiconductor device of claim 1, wherein said gate arrangement is received in a recess over said low field region.

### Claim 5 (depends on 4)

The power semiconductor device of claim 4, wherein said recess is configured to cause said low field region.

### Claim 6 (depends on 4)

The power semiconductor device of claim 4, wherein said recess is wider than said gate arrangement.

### Claim 7 (depends on 1)

The power semiconductor device of claim 1, further comprising at least one implanted region in said second III-nitride body under said gate arrangement configured to cause said low field region.

### Claim 8 (depends on 1)

The power semiconductor device of claim 1, wherein said gate arrangement does not include a field plate.

### Claim 9 (depends on 1)

The power semiconductor device of claim 1, further comprising a passivation body disposed over said III-nitride heterojunction body.

### Claim 10 (depends on 1)

The power semiconductor device of claim 1, wherein said first III-nitride body is comprised of a semiconductor alloy from the InAlGaN system, and said second III-nitride body is comprised of another alloy from the InAlGaN system.

### Claim 11 (depends on 1)

The semiconductor device of claim 1, wherein said first III-nitride body is comprised of GaN and said second III-nitride body is comprised of AlGaN.

### Claim 12 (depends on 1)

The semiconductor device of claim 1, wherein said heterojunction body is disposed over a substrate.

### Claim 13 (depends on 12)

The semiconductor device of claim 12, wherein said substrate is comprised of silicon.

### Claim 14 (depends on 12)

The semiconductor device of claim 12, wherein said substrate is comprised of silicon carbide.

### Claim 15 (depends on 12)

The semiconductor device of claim 12, wherein said substrate is comprised of sapphire.

### Claim 16 (depends on 12)

The semiconductor device of claim 12, wherein said substrate is comprised of a III-nitride material.

### Claim 17 (depends on 16)

The semiconductor device of claim 16, wherein said III-nitride material is GaN.

### Claim 18 (depends on 12)

The semiconductor device of claim 12, further comprising a transition body disposed between said substrate and said III-nitride heterojunction body.

### Claim 19 (depends on 18)

The semiconductor device of claim 18, wherein said transition body is comprised of a III-nitride material.

### Claim 20 (depends on 19)

The semiconductor device of claim 19, wherein said transition body is comprised of AlN.