# US 7,408,193 B2 · Semiconductor device and manufacturing method thereof

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- Number: US 7,408,193 B2
- Document ID: US7408193B2
- Status: Granted
- Kind: B2
- Application number: 11/530,353
- Filed: 2006-09-08
- Published: 2007-01-25
- Granted: 2008-08-05
- Earliest claimed: 2000-09-14
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Akira Ishikawa
- Web page: https://patentgrep.com/patent/US7408193B2

## CPC

- H10D 86/0214: {using temporary substrates}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 86/01: Manufacture or treatment
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10W 72/0198: {batch processes}
- G02F 1/133305: {Flexible substrates, e.g. plastics, organic film}
- G02F 1/13613: {the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate}
- H10P 72/7434: {used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device packaged in three dimensions comprises a first thin film device, a second thin film device, and a third thin film device, each of the first, second, and third thin film devices comprising a first insulating film, a first electrode formed over the first insulating film, a second insulating film formed over the first electrode, first and second thin film transistors formed over the second insulating film, wherein the first thin film transistor is connected to the first electrode through a first contact hole, a third insulating film formed over the first and second thin film transistor, a second electrode formed over the third insulating film, wherein the second electrode is connected to the second thin film transistor through a second contact hole, and a fourth insulating film formed over the third insulating film and the second electrode.

## Claims

### Claim 1

A semiconductor device comprising:
a first thin film device;
a second thin film device formed over the first thin film device;
a third thin film device formed over the second thin film device, each of the first, second, and third thin film devices comprising:
a first insulating film;
a first electrode formed over the first insulating film;
a second insulating film formed over the first electrode;
first and second thin film transistors formed over the second insulating film, wherein the first thin film transistor is connected to the first electrode through a first contact hole;
a third insulating film formed over the first and second thin film transistor;
a second electrode formed over the third insulating film, wherein the second electrode is connected to the second thin film transistor through a second contact hole; and
a fourth insulating film formed over the third insulating film and the second electrode,
wherein the second electrode of the first thin film device is electrically connected to the first electrode of the second thin film device, and
wherein the second electrode of the second thin film device is electrically connected to the first electrode of the third thin film device.

### Claim 2 (depends on 1)

An electric equipment having the semiconductor device according to claim 1, wherein the electric equipment is one selected from the group consisting of a cell phone, a video camera, a digital camera, a projection TV, a navigation system, a game machine, a portable type game device, a sound reproduction device, an electronic book, an image playback device having a recording medium, a mobile computer, a goggle type display, a rear projector, and a front projector.

### Claim 3 (depends on 1)

A semiconductor device according to claim 1, wherein the semiconductor device is an active matrix liquid crystal display device.

### Claim 4 (depends on 1)

A semiconductor device according to claim 1, wherein the semiconductor device is an EL display device.

### Claim 5 (depends on 1)

A semiconductor device according to claim 1, further comprising:
first and second conductive pastes,
wherein the second electrode of the first thin film device is electrically connected to the first electrode of the second thin film device by the first conductive paste, and
wherein the second electrode of the second thin film device is electrically connected to the first electrode of the third thin film device by the second conductive paste.

### Claim 6 (depends on 1)

A semiconductor device according to claim 1, wherein the first insulating film is a passivation film.

### Claim 7 (depends on 1)

A semiconductor device according to claim 1, wherein the first thin film device is overlapped with the second thin film device and the third thin film device.

### Claim 8

A semiconductor device comprising:
a first thin film device;
a second thin film device formed over the first thin film device;
a third thin film device formed over the second thin film device, each of the first, second, and third thin film devices comprising:
a first insulating film comprising an organic resin;
a second insulating film formed over the first insulating film;
a first electrode formed over the second insulating film;
a third insulating film formed over the first electrode;
first and second thin film transistors formed over the third insulating film, wherein the first thin film transistor is connected to the first electrode through a first contact hole;
a fourth insulating film formed over the first and second thin film transistor;
a second electrode formed over the fourth insulating film, wherein the second electrode is connected to the second thin film transistor through a second contact hole;
a fifth insulating film formed over the fourth insulating film and the second electrode; and
a sixth insulating film comprising an organic resin formed over the fifth insulating film,
wherein the second electrode of the first thin film device is electrically connected to the first electrode of the second thin film device, and
wherein the second electrode of the second thin film device is electrically connected to the first electrode of the third thin film device.

### Claim 9 (depends on 8)

An electric equipment having the semiconductor device according to claim 8, wherein the electric equipment is one selected from the group consisting of a cell phone, a video camera, a digital camera, a projection TV, a navigation system, a game machine, a portable type game device, a sound reproduction device, an electronic book, an image playback device having a recording medium, a mobile computer, a goggle type display, a rear projector, and a front projector.

### Claim 10 (depends on 8)

A semiconductor device according to claim 8, wherein the semiconductor device is an active matrix liquid crystal display device.

### Claim 11 (depends on 8)

A semiconductor device according to claim 8, wherein the semiconductor device is an EL display device.

### Claim 12 (depends on 8)

A semiconductor device according to claim 8, further comprising:
first and second conductive pastes,
wherein the second electrode of the first thin film device is electrically connected to the first electrode of the second thin film device by the first conductive paste, and
wherein the second electrode of the second thin film device is electrically connected to the first electrode of the third thin film device by the second conductive paste.

### Claim 13 (depends on 8)

A semiconductor device according to claim 8, wherein the second insulating film is a passivation film.

### Claim 14 (depends on 8)

A semiconductor device according to claim 8, wherein the first thin film device is overlapped with the second thin film device and the third thin film device.