# US 7,408,152 B2 · Ion source using matrix-assisted laser desorption/ionization

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 7,408,152 B2
- Document ID: US7408152B2
- Status: Granted
- Kind: B2
- Application number: 11/314,966
- Filed: 2005-12-21
- Published: 2006-08-03
- Granted: 2008-08-05
- Earliest claimed: 2004-12-22
- Assignees: Bruker Daltonik GmbH
- Inventors: Armin Holle; Jens Höhndorf; Andreas Haase; Markus Kayser
- Web page: https://patentgrep.com/patent/US7408152B2

## CPC

- H01S 3/09415: {the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping}
- H01J 49/164: {Laser desorption/ionisation, e.g. matrix-assisted laser desorption/ionisation [MALDI] (sample holders H01J49/0418)}
- H01S 5/041: {Optical pumping}
- H01S 3/005: {Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping (shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B)}
- H01S 3/1118: Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
- H01S 3/115: using intracavity electro-optic devices
- H01S 3/1611: {neodymium}
- H01S 3/1638: {YAlO3 (YALO or YAP, Yttrium Aluminium Perovskite)}
- H01S 5/14: External cavity lasers (H01S5/18 takes precedence; mode locking H01S5/065)
- H01S 5/183: having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

An ion source generating ions by matrix-assisted laser desorption/ionization (MALDI) comprising a MALDI sample support and a solid-state the laser system generating a pulsed laser beam, which has a wavelength in the range between 332 and 342 nanometers and is spatially shaped in the solid-state laser system such that the spatial intensity distribution of the laser beam on the MALDI sample support exhibits more than one intensity peak.

## Claims

### Claim 1

Ion source generating ions by matrix-assisted laser desorption/ionization (MALDI), comprising a MALDI sample support and a solid-state laser system generating a laser beam, which is temporally pulsed and has a wavelength in the range between 332 and 342 nanometers, wherein at least one optical or electro-optical component of the solid-state laser system spatially shapes the laser beam such that the spatial intensity distribution of the laser beam on the MALDI sample support exhibits more than one intensity peak.

### Claim 2 (depends on 1)

Ion source according to claim 1, wherein the solid-state laser system comprises a crystal doped with ions or a glass doped with ions as laser medium.

### Claim 3 (depends on 1)

Ion source according to claim 1, wherein the solid-state laser system comprises a semiconductor laser diode with one single emitter or a plurality of single emitters.

### Claim 4 (depends on 1)

Ion source according to claim 1, wherein the laser beam emitted by the laser medium has a wavelength in the range between 664 and 684 nanometers.

### Claim 5 (depends on 4)

Ion source according to claim 4, wherein the solid-state laser system comprises a semiconductor laser diode and the laser medium consists of alternate layers of gallium indium phosphide (Ga)(InP) and aluminum gallium indium phosphide (AlGa)(InP) emitting a laser beam at a wavelength of 674 nanometers.

### Claim 6 (depends on 1)

Ion source according to claim 1, wherein the laser beam emitted by the laser medium has a wavelength in the range between 996 and 1026 nanometers.

### Claim 7 (depends on 6)

Ion source according to claim 6, wherein the solid-state laser system comprises a semiconductor laser diode and the laser medium consists of alternate layers of gallium indium arsenide (GaIn)(As) and gallium arsenide (Ga)(As) emitting a laser beam at a wavelength of 1011 nanometers.

### Claim 8 (depends on 1)

Ion source according to claim 1, wherein the laser beam emitted by the laser medium has a wavelength in the range between 1328 and 1368 nanometers.

### Claim 9 (depends on 8)

Ion source according to claim 8, wherein the laser medium is a YAlO3 crystal doped with neodymium ions emitting a laser beam at a wavelength of 1341 nanometers.

### Claim 10 (depends on 8)

Ion source according to claim 8, wherein the laser medium is a YVO4 crystal doped with neodymium ions emitting a laser beam at a wavelength of 1342 nanometers.

### Claim 11 (depends on 4)

Ion source according to one of the claim 4, wherein the wavelength of the laser beam emitted by the laser medium is converted into a wavelength in the range between 332 and 342 nanometers by generating higher order harmonics in nonlinear crystals.

### Claim 12 (depends on 1)

Ion source according to claim 1, wherein the at least one optical or electro-optical component is adjustable to create different spatial intensity distributions of the laser beam on the MALDI sample support.