# US 7,407,887 B2 · Nanostructures, nanogrooves, and nanowires

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- Number: US 7,407,887 B2
- Document ID: US7407887B2
- Status: Granted
- Kind: B2
- Application number: 10/966,262
- Filed: 2004-10-14
- Published: 2006-03-02
- Granted: 2008-08-05
- Earliest claimed: 2003-10-16
- Assignees: The Regents of the University of California
- Inventors: Ting Guo
- Web page: https://patentgrep.com/patent/US7407887B2

## CPC

- H10W 20/031: {of conductive parts of the interconnections}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- H10P 14/46: using a liquid
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Compositions and methods for making nanostructures and nanowires on substrates, including but not limited to metal-semiconductor nanostructures and semiconductor nanowires on semiconductor substrates. Particularly described are methods for making cobalt silicide nanostructures on silicon substrates and for making silicon nanowires on silicon substrates using cobalt nanoparticles. Nanogrooves and methods of making nanogrooves. Methods of making silanes.

## Claims

### Claim 1

A method for producing cobalt silicide nanostructures on a substrate, the method comprising heating at least a portion of a cobalt nanoparticle coated silicon substrate comprising a silicon substrate and cobalt nanoparticles in a heating temperature range of between about 700° C. and 1100° C.; and maintaining at least a portion of the nanoparticle coated substrate in a reaction temperature range of between about 700° C. and 1100° C. for a reaction time, wherein the cobalt silicide nanostructures comprise atoms from the silicon substrate and from the cobalt nanoparticles.

### Claim 2 (depends on 1)

The method of claim 1, further comprising contacting the silicon substrate with a composition comprising the cobalt nanoparticles to form the cobalt nanoparticle coated silicon substrate.

### Claim 3 (depends on 1)

The method of claim 1 wherein the reaction time is about 2 hours or less.

### Claim 4 (depends on 1)

The method of claim 1, wherein the cobalt nanoparticles further comprise an added impurity selected from oxygen and carbon.

### Claim 5 (depends on 1)

The method of claim 1, wherein the cobalt nanoparticles are approximately spherical and have a diameter of between about 2 nm and about 15 nm.

### Claim 6 (depends on 5)

The method of claim 5, wherein the cobalt nanoparticles have a diameter of between about 2 nm and about 5 nm.

### Claim 7 (depends on 5)

The method of claim 5, wherein the cobalt nanoparticles have a diameter of between about 8 nm and about 14 nm.

### Claim 8 (depends on 2)

The method of claim 2, wherein the cobalt nanoparticles of the composition are a population of approximately spherical cobalt nanoparticles, each cobalt nanoparticle of the population having a diameter; the population of nanoparticles having an average diameter between about 1 nm and about 5 nm; and the standard deviation of the diameters of the cobalt nanoparticles in the population being less than or equal to about 0.2 of the average diameter.

### Claim 9 (depends on 2)

The method of claim 2, wherein the cobalt nanoparticles of the composition are a population of approximately spherical cobalt nanoparticles, each nanoparticle having a diameter; the population of nanoparticles having an average diameter between about 8 nm and about 16 nm; and the standard deviation of the diameters of the cobalt nanoparticles in the population being less than or equal to about 0.2 of the average diameter.

### Claim 10 (depends on 1)

The method of claim 1, wherein the density of the cobalt nanoparticles on the cobalt nanoparticle coated silicon substrate is between about 109 and about 1012 nanoparticles per square centimeter.

### Claim 11 (depends on 2)

The method of claim 2, further comprising removing surface contaminants from the silicon substrate before contacting the silicon substrate with the composition comprising the cobalt nanoparticles.

### Claim 12 (depends on 2)

The method of claim 2, further comprising polishing the silicon substrate before contacting the silicon substrate with the composition comprising the cobalt nanoparticles.

### Claim 13 (depends on 1)

The method of claim 1, wherein the cobalt suicide nanostructures comprise crystalline or substantially crystalline CoSi2.

### Claim 14 (depends on 13)

The method of claim 13, wherein the cobalt suicide nanostructures have a depth of between about 1 nm and about 50 nm; a width of between about 1 nm and about 50 nm; and a length of between about 30 nm and 10,000 nm.

### Claim 15 (depends on 14)

The method of claim 14, wherein the cobalt silicide nanostructures have a length of between about 30 nm and 500 nm.