# US 7,407,882 B1 · Semiconductor component having a contact structure and method of manufacture

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- Number: US 7,407,882 B1
- Document ID: US7407882B1
- Status: Granted
- Kind: B1
- Application number: 10/928,665
- Filed: 2004-08-27
- Granted: 2008-08-05
- Earliest claimed: 2004-08-27
- Assignees: Spansion LLC; Advanced Micro Devices, Inc.
- Inventors: Connie Pin-Chin Wang; Paul R. Besser; Wen Yu; Jinsong Yin; Keizaburo Yoshie
- Web page: https://patentgrep.com/patent/US7407882B1

## CPC

- H10W 20/033: {in openings in dielectrics}
- H10D 64/0112: {using conductive layers comprising silicides}
- H10W 20/048: {by using plasmas or gaseous environments, e.g. by nitriding}
- H10W 20/081: {by forming openings in the dielectric parts}
- H10P 14/43: Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor component having a titanium silicide contact structure and a method for manufacturing the semiconductor component. A layer of dielectric material is formed over a semiconductor substrate. An opening having sidewalls is formed in the dielectric layer and exposes a portion of the semiconductor substrate. Titanium silicide is disposed on the dielectric layer, sidewalls, and the exposed portion of the semiconductor substrate. The titanium silicide may be formed by disposing titanium on the dielectric layer, sidewalls, and exposed portion of the semiconductor substrate and reacting the titanium with silane. Alternatively, the titanium silicide may be sputter deposited. A layer of titanium nitride is formed on the titanium silicide. A layer of tungsten is formed on the titanium nitride. The tungsten, titanium nitride, and titanium silicide are polished to form the contact structures.

## Claims

### Claim 1

A method for manufacturing a semiconductor component, comprising:
providing a semiconductor substrate having a major surface;
forming a layer of dielectric material over the semiconductor substrate;
forming an opening in the layer of dielectric material, wherein the opening has sidewalls and exposes a portion of the major surface;
sputtering titanium silicide from a titanium silicide target onto the sidewalls and the exposed portion of the major surface to form a layer of titanium silicide having a thickness ranging from about 20 Å to less than 150 Å.

### Claim 2 (depends on 1)

The method of claim 1, further including forming an electrically conductive material in the opening.

### Claim 3 (depends on 2)

The method of claim 2, further including forming a layer of titanium nitride on the titanium silicide.

### Claim 4 (depends on 3)

The method of claim 3, wherein forming the electrically conductive material in the opening further includes forming an electrically conductive material on the titanium nitride.

### Claim 5 (depends on 4)

The method of claim 4, wherein the electrically conductive material is tungsten.