# US 7,407,870 B2 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,407,870 B2 - Document ID: US7407870B2 - Status: Granted - Kind: B2 - Application number: 11/410,073 - Filed: 2006-04-25 - Published: 2006-08-24 - Granted: 2008-08-05 - Earliest claimed: 2002-12-27 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Junya Maruyama; Yumiko Ohno; Toru Takayama; Yuugo Goto; Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US7407870B2 ## CPC - H10D 86/0214: {using temporary substrates} - H10D 86/40: characterised by multiple TFTs - H10D 86/60: wherein the TFTs are in active matrices - H10P 72/74: {using temporarily an auxiliary support} - H10P 72/743: {used as a support during manufacture of interconnect decals or build up layers} - H10P 72/7434: {used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means. Through the separation method, heat treatment is carried out to diffuse hydrogen contained in the semiconductor film, a third oxide is formed by reducing a second oxide formed at a surface boundary between the metal film and the first oxide film, and a film containing the second oxide and the third oxide, a surface boundary between the film containing the second oxide and the third oxide, and the metal film, or a surface boundary between the film containing the second oxide and the third oxide, and the first oxide is split. ## Claims ### Claim 1 A method for manufacturing a semiconductor device comprising: forming a metal film over a first substrate; forming an oxide film over the metal film; forming at least a transistor including a semiconductor film containing hydrogen over the oxide film; forming an insulating film over the transistor; bonding a second substrate to the insulating film; separating at least the transistor and the insulating film from the first substrate by heating to diffuse hydrogen contained in the semiconductor film and reducing metal oxide formed at a surface boundary between the metal film and the oxide film. ### Claim 2 (depends on 1) A method according to claim 1, wherein the transistor and the insulating film are separated from the first substrate in the reduced metal oxide, a surface boundary between the reduced metal oxide and the metal film, or a surface boundary between the reduced metal oxide and the oxide film. ### Claim 3 (depends on 1) A method according to claim 1, wherein the metal film is formed of an element selected from the group consisting of W (tungsten), Ti (titanium), Mo (molybdenum), Cr (chrome), Nd (neodymium), Fe (iron), Ni (nickel), Co (cobalt), Zr (zirconium), Zn (zinc), Ru (ruthenium), Rh (rhodium), Pd (palladium), Os (osmium), Ir (iridium); a single layer formed of an alloy material or a compound material, each of which contains the above elements as its main components; or a lamination layer formed of these metals or mixture of these metals. ### Claim 4 (depends on 1) A method according to claim 1, wherein the heating treatment is carried out at 400° C. or higher. ### Claim 5 (depends on 1) A method according to claim 1, wherein the reduced metal oxide and the metal oxide are crystallized. ### Claim 6 (depends on 1) A method according to claim 1, wherein the oxide film is formed of a silicon oxide film deposited by sputtering. ### Claim 7 (depends on 1) A method according to claim 1, wherein the semiconductor film is formed of a silicon film deposited by CVD. ### Claim 8 A method for manufacturing a semiconductor device comprising: forming a metal film over a first substrate; forming an oxide film over the metal film; forming at least a transistor including a nitride film containing hydrogen over the oxide film; forming an insulating film over the transistor; bonding a second substrate to the insulating film; separating at least the transistor and the insulating film from the first substrate by heating to diffuse hydrogen contained in the nitride film and reducing metal oxide formed at a surface boundary between the metal film and the oxide film. ### Claim 9 (depends on 8) A method according to claim 8, wherein the transistor and the insulating film are separated from the first substrate in the reduced metal oxide, a surface boundary between the reduced metal oxide and the metal film, or a surface boundary between the reduced metal oxide and the oxide film. ### Claim 10 (depends on 8) A method according to claim 8, wherein the metal film is formed of an element selected from the group consisting of W (tungsten), Ti (titanium), Mo (molybdenum), Cr (chrome), Nd (neodymium), Fe (iron), Ni (nickel), Co (cobalt), Zr (zirconium), Zn (zinc), Ru (ruthenium), Rh (rhodium), Pd (palladium), Os (osmium), Ir (iridium); a single layer formed of an alloy material or a compound material, each of which contains the above elements as its main components; or a lamination layer formed of these metals or mixture of these metals. ### Claim 11 (depends on 8) A method according to claim 8, wherein the heating treatment is carried out at 400° C. or higher. ### Claim 12 (depends on 8) A method according to claim 8, wherein the reduced metal oxide and the metal oxide are crystallized. ### Claim 13 (depends on 8) A method according to claim 8, wherein the oxide film is formed of a silicon oxide film deposited by sputtering. ### Claim 14 (depends on 8) A method according to claim 8, wherein the semiconductor film is formed of a silicon film deposited by CVD. ### Claim 15 A method for manufacturing a semiconductor device comprising: forming a metal film over a first substrate; forming an oxide film over the metal film; forming at least a transistor including a semiconductor film containing hydrogen over the oxide film; forming an insulating film over the transistor; heating to diffuse hydrogen contained in the semiconductor film and reducing metal oxide formed at a surface boundary between the metal film and the oxide film, bonding a second substrate to the insulating film; separating at least the transistor and the insulating film from the first substrate. ### Claim 16 (depends on 15) A method according to claim 15, wherein the transistor and the insulating film are separated from the first substrate in the reduced metal oxide, a surface boundary between the reduced metal oxide and the metal film, or a surface boundary between the reduced metal oxide and the oxide film. ### Claim 17 (depends on 15) A method according to claim 15, wherein the metal film is formed of an element selected from the group consisting of W (tungsten), Ti (titanium), Mo (molybdenum), Cr (chrome), Nd (neodymium), Fe (iron), Ni (nickel), Co (cobalt), Zr (zirconium), Zn (zinc), Ru (ruthenium), Rh (rhodium), Pd (palladium), Os (osmium), Ir (iridium); a single layer formed of an alloy material or a compound material, each of which contains the above elements as its main components; or a lamination layer formed of these metals or mixture of these metals. ### Claim 18 (depends on 15) A method according to claim 15, wherein the heating treatment is carried out at 400° C. or higher. ### Claim 19 (depends on 15) A method according to claim 15, wherein the reduced metal oxide and the metal oxide are crystallized. ### Claim 20 (depends on 15) A method according to claim 15, wherein the oxide film is formed of a silicon oxide film deposited by sputtering. ### Claim 21 (depends on 15) A method according to claim 15, wherein the semiconductor film is formed of a silicon film deposited by CVD. ### Claim 22 A method for manufacturing a semiconductor device comprising: forming a metal film over a first substrate; forming an oxide film over the metal film; forming at least a transistor including a nitride film containing hydrogen over the oxide film; forming an insulating film over the transistor; heating to diffuse hydrogen contained in the nitride film and reducing metal oxide formed at a surface boundary between the metal film and the oxide film, bonding a second substrate to the insulating film; separating at least the transistor and the insulating film from the first substrate. ### Claim 23 (depends on 22) A method according to claim 22, wherein the transistor and the insulating film are separated from the first substrate in the reduced metal oxide, a surface boundary between the reduced metal oxide and the metal film, or a surface boundary between the reduced metal oxide and the oxide film. ### Claim 24 (depends on 22) A method according to claim 22, wherein the metal film is formed of an element selected from the group consisting of W (tungsten), Ti (titanium), Mo (molybdenum), Cr (chrome), Nd (neodymium), Fe (iron), Ni (nickel), Co (cobalt), Zr (zirconium), Zn (zinc), Ru (ruthenium), Rh (rhodium), Pd (palladium), Os (osmium), Ir (iridium); a single layer formed of an alloy material or a compound material, each of which contains the above elements as its main components; or a lamination layer formed of these metals or mixture of these metals. ### Claim 25 (depends on 22) A method according to claim 22, wherein the heating treatment is carried out at 400° C. or higher. ### Claim 26 (depends on 22) A method according to claim 22, wherein the reduced metal oxide and the metal oxide are crystallized. ### Claim 27 (depends on 22) A method according to claim 22, wherein the oxide film is formed of a silicon oxide film deposited by sputtering. ### Claim 28 (depends on 22) A method according to claim 22, wherein the semiconductor film is formed of a silicon film deposited by CVD.