# US 7,407,866 B2 · Soi wafer and a method for producing the same

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- Number: US 7,407,866 B2
- Document ID: US7407866B2
- Status: Granted
- Kind: B2
- Application number: 10/542,376
- Filed: 2004-01-22
- Published: 2006-06-01
- Granted: 2008-08-05
- Earliest claimed: 2003-01-23
- Assignees: Shin-Etsu Handotai Co., Ltd.
- Inventors: Masahiro Sakurada; Nobuaki Mitamura; Izumi Fusegawa
- Web page: https://patentgrep.com/patent/US7407866B2

## CPC

- C30B 29/06: Silicon
- C30B 15/203: {the relationship of pull rate (v) to axial thermal gradient (G)}
- H10P 90/1914: {using bonding}
- H10W 10/181: {Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within N region outside OSF region and doesn't include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside OSF region, doesn't include a defect region detected by Cu deposition method, and includes I region containing dislocation cluster due to interstitial silicon. Thereby, there is provided an SOI wafer that retains high insulating properties and has an excellent electrical reliability in device fabrication even in the case of forming an extremely thin interlevel dielectric oxide film with, for example, a thickness of 100 nm or less.

## Claims

### Claim 1

An SOI wafer in which a base wafer and a bond wafer respectively consisting of silicon single crystal are bonded via an oxide film having a thickness of 10 nm-100 nm, and then the bond wafer is thinned to form a silicon active layer, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and a whole surface of the base wafer is within an N region outside of an OSF region and does not include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region outside of the OSF region, does not include a defect region detected by Cu deposition method, and includes an I region containing dislocation cluster due to interstitial silicon.

### Claim 2 (depends on 1)

The SOI wafer according to claim 1, wherein the SOI wafer is produced by ion implantation delamination method in which ions are implanted into the bond wafer and the bond wafer is thinned by delamination at the ion-implanted layer.

### Claim 3 (depends on 1)

The SOI wafer according to claim 1, wherein the silicon active layer consists of silicon single crystal grown by Czochralski method, and the whole surface of the silicon active layer is within the N region outside of the OSF region and does not include the defect region detected by Cu deposition method.

### Claim 4 (depends on 2)

The SOI wafer according to claim 2, wherein the silicon active layer consists of silicon single crystal grown by Czochralski method, and the whole surface of the silicon active layer is within the N region outside of the OSF region and does not include the defect region detected by Cu deposition method.

### Claim 5

A method for producing an SOI wafer comprising at least the steps of: forming an oxide film having a thickness of 10 nm-100 nm, at least on one of a base wafer and a bond wafer respectively consisting of silicon single crystal, implanting ions into the bond wafer to form an ion-implanted layer, bonding a surface of an ion-implanted side of the bond wafer and the base wafer via the oxide film, and delaminating the bond wafer at the ion-implanted layer as a boundary, wherein the base wafer is formed of silicon single crystal grown by Czochralski method, and the whole surface of the base wafer is within an N region formed at lower speed than an OSF region generated in a ring shape when grown with gradually decreasing pulling rate from high speed to low speed, and does not include a defect region detected by Cu deposition method, or the whole surface of the base wafer is within a region formed at lower speed than the OSF region generated in a ring shape when grown with gradually decreasing pulling rate from high speed to low speed, does not include the defect region detected by Cu deposition method, and includes an I region containing dislocation cluster due to interstitial silicon.

### Claim 6 (depends on 5)

The method for producing an SOI wafer according to claim 5, wherein the bond wafer is formed of silicon single crystal grown by Czochralski method, and of which the whole surface is within the N region formed at lower speed than the OSF region generated in a ring shape when grown with gradually decreasing pulling rate from high speed to low speed and does not include the defect region detected by Cu deposition method.