# US 7,407,840 B2 · Display device, method of production of the same, and projection type display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,407,840 B2 - Document ID: US7407840B2 - Status: Granted - Kind: B2 - Application number: 11/207,347 - Filed: 2005-08-19 - Published: 2006-01-05 - Granted: 2008-08-05 - Earliest claimed: 2002-06-07 - Assignees: Sony Corporation - Inventors: Shingo Makimura; Makoto Hashimoto; Yoshiro Okawa; Tomohiro Wada; Kazunori Kataoka - Web page: https://patentgrep.com/patent/US7407840B2 ## CPC - H10P 14/3808: {using laser beams} - G02F 1/13454: {Drivers integrated on the active matrix substrate (G02F1/136277 takes precedence)} - G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)} - H10D 30/0314: {of lateral top-gate TFTs comprising only a single gate} - H10D 30/0321: {comprising silicon, e.g. amorphous silicon or polysilicon} - H10D 30/6706: {for preventing leakage current (TFTs characterised by the properties of the source or drain H10D30/6713)} - H10D 30/6723: {having light shields} - H10D 30/6731: {Top-gate only TFTs} - H10D 30/6745: {Polycrystalline or microcrystalline silicon} - H10D 62/40: Crystalline structures - H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates - H10D 86/0229: {characterised by control of the annealing or irradiation parameters} - H10P 14/24: using chemical vapour deposition [CVD] - H10P 14/3411: {Silicon, silicon germanium or germanium} - G02F 2202/104: poly-Si - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon film 111 forming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals. ## Claims ### Claim 1 A method of production of a display device having a substrate on which a display unit and a peripheral drive unit are integrally formed, said display unit having pixels arranged in a matrix and pixel transistors switching them ON and OFF, said drive unit having peripheral transistors comprising a drive circuit for scanning the matrix of pixel transistors, and both of said pixel transistors and peripheral transistors being comprised of thin film transistors obtained by stacking polycrystalline semiconductor thin films and gate electrodes via gate insulating films, said method including: a film forming step of forming a polycrystalline silicon film over a display unit portion and a drive unit portion of said substrate, portions of the polycrystalline silicon film constituting an active layer for the pixel transistors and the peripheral transistors; an impurity implantation step of implanting electrically inactive impurities that do not exert any influence upon electrical characteristics of the active layer into said polycrystalline silicon film so as to convert the polycrystalline silicon film to an amorphous silicon film; and a recrystallization step of heat treating the amorphous silicon film so as to obtain the polycrystalline silicon film again, wherein said impurity implantation step is carried out so that the impurity implantation amount differs between portions of said polycrystalline silicon film portion corresponding to said display unit and portions of said polycrystalline silicon film portion corresponding to said drive unit, and thereby an average crystal grain size of the polycrystalline silicon film of said pixel transistors and an average crystal grain size of the polycrystalline silicon film of said peripheral transistors differ. ### Claim 2 (depends on 1) The method of production of a display device as set forth in claim 1, wherein said recrystallization step includes loading said substrate into a furnace set to 580° C. or more in a nitrogen atmosphere to perform heat treatment for a predetermined time. ### Claim 3 (depends on 1) The method of production of a display device as set forth in claim 1, wherein said recrystallization step is by a laser annealing process including irradiating a laser beam to said substrate to perform heat treatment. ### Claim 4 (depends on 1) The method of production of a display device as set forth in claim 1, wherein said impurity implantation step is carried out so that the impurity implantation amount becomes smaller in portions of said polycrystalline silicon film portion corresponding to said display unit than in portions of said polycrystalline silicon film portion corresponding to said drive unit, and thereby the average crystal grain size of the polycrystalline silicon film of said pixel transistors becomes smaller than the average crystal grain size of the polycrystalline silicon film of said peripheral transistors. ### Claim 5 (depends on 4) The method of production of a display device as set forth in claim 4, wherein said recrystallization step controls the average crystal grain size of the polycrystalline silicon film of said pixel transistors to 300 nm or less and controls the average crystal grain size of the polycrystalline silicon film of said peripheral transistors to 800 nm or more. ### Claim 6 (depends on 1) The method of production of a display device as set forth in claim 1, wherein said film forming step forms said polycrystalline silicon film in a range of thickness from 25 to 50 nm. ### Claim 7 (depends on 1) The method of production of a display device as set forth in claim 1, further comprising a light shield forming step including the formation of one or more light shield layers over the active region of the pixel transistors. ### Claim 8 (depends on 1) The method of production of a display device as set forth in claim 1, wherein said impurity implantation step includes an ion implantation step for implanting ions that do not exert an influence upon electrical characteristics of the active layer of the pixel or peripheral transistors. ### Claim 9 (depends on 8) The method of production of a display device as set forth in claim 8, wherein said ion implantation step implants Si+ or SiF3+ ions. ### Claim 10 (depends on 8) The method of production of a display device as set forth in claim 8, wherein said ion implantation step comprises at least two ion implantations, wherein during a first ion implantation, ions are injected into regions of the polycrystalline silicon film corresponding to the display unit and the drive unit at a same amount, and a second ion implantation step is executed after a resist is formed over the display unit region in order to increase the implantation amount in the region of the polycrystalline silicon film corresponding to the drive unit. ### Claim 11 (depends on 8) The method of production of a display device as set forth in claim 8, wherein said ion implantation step comprises a single implantation step, wherein the scanning direction of the ion implantation apparatus is controlled in order to cause a higher ion implantation amount in the region of the polycrystalline silicon film corresponding to the drive unit region than an ion implantation amount in the region of the polycrystalline film corresponding to the pixel unit region. ### Claim 12 (depends on 8) The method of production of a display device as set forth in claim 8, wherein said ion implantation step comprises a single implantation step, wherein prior to implantation a thin insulating film is formed over the pixel transistor region, such that during implantation, a portion of the ions that are implanted over the pixel region are absorbed in the insulating film, and a portion of the ions reach the polycrystalline silicon film portion in the pixel region, and wherein no insulating film is formed over the peripheral region prior to implantation. ### Claim 13 A method of production of a display device having a substrate on which a display unit and a peripheral drive unit are integrally formed, said display unit having pixels arranged in a matrix and pixel transistors switching them ON and OFF, said drive unit having peripheral transistors comprising a drive circuit for scanning the matrix of pixel transistors, and both of said pixel transistors and peripheral transistors being comprised of thin film transistors obtained by stacking polycrystalline semiconductor thin films and gate electrodes via gate insulating films, said method including: a film forming step of forming a polycrystalline silicon film over a display unit portion and a drive unit portion of said substrate, portions of the polycrystalline silicon film constituting an active layer for the pixel transistors and the peripheral transistors; an implantation step of implanting Si+ or SiF3+ ions into said polycrystalline silicon film so as to convert the polycrystalline silicon film to an amorphous silicon film; and a recrystallization step of heat treating the amorphous silicon film so as to obtain the polycrystalline silicon film again, wherein said implantation step is carried out so that the ion implantation amount differs between portions of said polycrystalline silicon film portion corresponding to said display unit and portions of said polycrystalline silicon film portion corresponding to said drive unit, and thereby an average crystal grain size of the polycrystalline silicon film of said pixel transistors and an average crystal grain size of the polycrystalline silicon film of said peripheral transistors differ. ### Claim 14 (depends on 13) The method of production of a display device as set forth in claim 13, wherein said ion implantation step comprises at least two ion implantations, wherein during a first ion implantation, ions are injected into regions of the polycrystalline silicon film corresponding to the display unit and the drive unit at a same amount, and a second ion implantation step is executed after a resist is formed over the display unit region in order to increase the implantation amount in the region of the polycrystalline silicon film corresponding to the drive unit. ### Claim 15 (depends on 13) The method of production of a display device as set forth in claim 13, wherein said ion implantation step comprises a single implantation step, wherein the scanning direction of the ion implantation apparatus is controlled in order to cause a higher ion implantation amount in the region of the polycrystalline silicon film corresponding to the drive unit region than an ion implantation amount in the region of the polycrystalline film corresponding to the pixel unit region. ### Claim 16 (depends on 13) The method of production of a display device as set forth in claim 13, wherein said ion implantation step comprises a single implantation step, wherein prior to implantation a thin insulating film is formed over the pixel transistor region, such that during implantation, a portion of the ions that are implanted over the pixel region are absorbed in the insulating film, and a portion of the ions reach the polycrystalline silicon film portion in the pixel region, and wherein no insulating film is formed over the peripheral region prior to implantation. ### Claim 17 (depends on 13) The method of production of a display device as set forth in claim 13, wherein said ion implantation step is carried out so that the impurity implantation amount becomes smaller in portions of said polycrystalline silicon film portion corresponding to said display unit than in portions of said polycrystalline silicon film portion corresponding to said drive unit, and thereby the average crystal grain size of the polycrystalline silicon film of said pixel transistors becomes smaller than the average crystal gain size of the polycrystalline silicon film of said peripheral transistors. ### Claim 18 (depends on 17) The method of production of a display device as set forth in claim 17, wherein said recrystallization step controls the average crystal grain size of the polycrystalline silicon film of said pixel transistors to 300 nm or less and controls the average crystal grain size of the polycrystalline silicon film of said peripheral transistors to 800 nm or more.