# US 7,407,730 B2 · Exposure pattern or mask and inspection method and manufacture method for the same

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- Number: US 7,407,730 B2
- Document ID: US7407730B2
- Status: Granted
- Kind: B2
- Application number: 11/652,604
- Filed: 2007-01-12
- Published: 2007-05-24
- Granted: 2008-08-05
- Earliest claimed: 2003-02-21
- Assignees: Sony Corporation
- Inventors: Hironori Ibusuki
- Web page: https://patentgrep.com/patent/US7407730B2

## CPC

- G06T 7/001: {using an image reference approach}
- G03F 1/20: Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
- G03F 1/84: Inspecting
- G06T 2207/30148: Semiconductor; IC; Wafer
- G06T: IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

An exposure pattern or mask inspection and manufacture method and an exposure pattern or mask are provided which can perform comparison inspection of the exposure pattern or mask with ease and at a high precision. A mask pattern portion for exposing a predetermined pattern by an exposure beam is inspected by disposing a plurality of dummy inspection patterns having the same pattern as at least a part of the mask pattern portion, inside and/or outside an area of the mask pattern portion and comparing at least the portion of the mask pattern portion with the dummy inspection pattern portion or portions.

## Claims

### Claim 1

An exposure pattern or mask for exposing a predetermined pattern by an exposure beam,
wherein a plurality of inspection pattern portions are disposed inside and/or outside a mask pattern portion of said exposure pattern or mask, said inspection pattern portion having a corresponding pattern as a pattern of said at least a part of mask pattern portion,
wherein said mask pattern portion has through holes arranged to form a predetermined pattern through which said exposure beam transmits, and said inspection pattern portions have recesses arranged to form a corresponding pattern.

### Claim 2

An exposure pattern or mask comprising:
a stencil mask having an inspection pattern portion and a mask pattern portion,
wherein through holes extending into a surface of the stencil mask at said mask pattern portion pass through said stencil mask, and
wherein recesses extending into said surface of the stencil mask at said inspection pattern portion terminate within said stencil mask.

### Claim 3 (depends on 2)

The exposure pattern or mask according to claim 2, wherein said through holes form a predetermined pattern through which an exposure beam transmits.

### Claim 4 (depends on 2)

The exposure pattern or mask according to claim 2, wherein said through holes are a mask pattern.

### Claim 5 (depends on 2)

The exposure pattern or mask according to claim 2, wherein said recesses are an inspection pattern.

### Claim 6 (depends on 2)

The exposure pattern or mask according to claim 2, wherein said mask pattern and said inspection pattern are the same pattern.

### Claim 7 (depends on 2)

The exposure pattern or mask according to claim 2, wherein said stencil mask includes a film, a membrane, and a substrate,
said film being between said membrane and said substrate.

### Claim 8 (depends on 7)

The exposure pattern or mask according to claim 7, wherein an opening within the substrate extends from a surface of the substrate to said film.

### Claim 9 (depends on 8)

The exposure pattern or mask according to claim 8, wherein an opening within the film extends from said opening within the substrate to said membrane.

### Claim 10 (depends on 9)

The exposure pattern or mask according to claim 9, wherein said through holes extend through said membrane to said opening within the film.

### Claim 11 (depends on 9)

The exposure pattern or mask according to claim 9, wherein said recesses extend through said membrane to said film.
