# US 7,407,601 B2 · Polymeric particle slurry system and method to reduce feature sidewall erosion > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,407,601 B2 - Document ID: US7407601B2 - Status: Granted - Kind: B2 - Application number: 10/423,569 - Filed: 2003-04-24 - Published: 2004-11-18 - Granted: 2008-08-05 - Earliest claimed: 2003-04-24 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Inventors: Shen-Nan Lee; Ying-Ho Chen; Syun-Ming Jang; Tzu-Jen Chou - Web page: https://patentgrep.com/patent/US7407601B2 ## CPC - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09K 3/1409: {Abrasive particles per se (preparation of diamond C01B32/25)} - C09K 3/1463: {Aqueous liquid suspensions} - H10P 52/403: {of conductive or resistive materials} - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than about 9.5; and wherein the method includes providing a semiconductor wafer process surface including a oxide containing material and metal filled semiconductor features; providing the system; and, polishing in a CMP process the semiconductor wafer process surface using the slurry system to remove at least a portion of the oxide containing material and the metal comprising the metal filled semiconductor features. ## Claims ### Claim 1 A slurry system for an improved low-K oxide/copper chemical mechanical polishing (CMP) process with low solids content to avoid copper damascene sidewall erosion and to reduce CMP impact forces comprising: an aqueous dispersion comprising particles, said particles comprising a first material having an elastomeric polymer outer surface, said first material surrounding a core comprising a second material, said second material different from said first material, said particles in said aqueous dispersion capable of exhibiting elastic behavior during the CMP process, said elastomeric polymer only on said particles in said aqueous dispersion; said aqueous dispersion having a pH of between about 7.0 and about 10.0, and, wherein said aqueous dispersion has a solids content of said particles of between about 0.5 and about 6.5 weight percent of the total weight of the aqueous dispersion. ### Claim 2 (depends on 1) The slurry system of claim 1, wherein the particles comprise a thermoplastic material. ### Claim 3 (depends on 1) The slurry system of claim 1, wherein the elastomeric polymer outer surface comprises a material selected from the group consisting of polyurethanes, neoprenes, silicones, fluorosilicones, fluorocarbon polymers, polysulfones, acrylic resins, polyacetals, saturated polyesters, polyamides, polyimides, polypropyilenes, phenol resins, urea resins, melamine resins, and epoxy resins. ### Claim 4 (depends on 1) The slurry system of claim 1, wherein the particles comprise an elastomeric polymer coating over a metal oxide. ### Claim 5 (depends on 1) The slurry system of claim 1, wherein the particles have a mean particle diameter of from about 20 nanometers to about 500 nanometers. ### Claim 6 (depends on 1) The slurry system of claim 1, wherein the particles have a mean particle diameter of from about 50 nanometers to about 200 nanometers. ### Claim 7 (depends on 1) The slurry system of claim 1, wherein the slurry system further comprises an additive selected from the group consisting of ammonium hydroxide (NH4OH), ammonia (NH3), and tetra methyl ammonium hydroxide (TMAH). ### Claim 8 (depends on 1) The slurry system of claim 1, further comprising a surfactant at about 0.01 weight percent to about 0.5 weight percent. ### Claim 9 (depends on 8) The slurry system of claim 8, wherein the surfactant is selected from the group consisting of fatty acids and their salts. ### Claim 10 (depends on 9) The slurry system of claim 9, wherein the surfactant includes at least one of a detergent and a soap. ### Claim 11 (depends on 1) The slurry system of claim 1, wherein the elastomeric polymer outer surface surrounds a core comprising an inorganic material. ### Claim 12 A slurry system for an improved low-K oxide/copper chemical mechanical polishing (CMP) process to reduce copper damascene sidewall erosion comprising: an alkaline aqueous dispersion comprising abrasive particles, said abrasive particles consisting essentially of particles comprising a first material having an elastomeric polymer outer surface, said first material surrounding a core comprising a second material, said second material different from said first material, said abrasive particles in said alkaline aqueous dispersion capable of exhibiting elastic behavior during the CMP process, said elastomeric polymer only on said particles in said alkaline aqueous dispersion. ### Claim 13 (depends on 12) The slurry system of claims 12 wherein said alkaline aqueous dispersion has a pH of between about 7.0 and about 10.0. ### Claim 14 (depends on 12) The slurry system of claims 12 wherein said alkaline aqueous dispersion has a solids content of said particles of between about 0.5 and about 6.5 weight percent of the total weight of the aqueous dispersion. ### Claim 15 (depends on 12) The slurry system of claim 12, wherein the particles comprise a thermoplastic material. ### Claim 16 (depends on 12) The slurry system of claim 12, wherein the elastomeric polymer outer surface comprises a material selected from the group consisting of polyurethanes, neoprenes, silicones, fluorosilicones, fluorocarbon polymers, polysulfones, acrylic resins, polyacetals, saturated polyesters, polyamides, polyimides, polypropylenes, phenol resins, urea resins, melamine resins, and epoxy resins. ### Claim 17 (depends on 12) The slurry system of claim 12, wherein the particles comprise an elastomeric polymer coating over a metal oxide. ### Claim 18 (depends on 12) The slurry system of claim 12, wherein the abrasive particles have a mean particle diameter of from about 20 nanometers to about 500 nanometers. ### Claim 19 (depends on 12) The slurry system of claim 12, wherein the abrasive particles have a mean particle diameter of from about 50 nanometers to about 200 nanometers. ### Claim 20 (depends on 12) The slurry system of claim 12, wherein the slurry system further comprises an additive selected from the group consisting of ammonium hydroxide (NH4OH), ammonia (NH3), and tetra methyl ammonium hydroxide (TMAH). ### Claim 21 (depends on 12) The slurry system of claim 12, further comprising a surfactant at about 0.01 weight percent to about 0.5 weight percent. ### Claim 22 (depends on 21) The slurry system of claim 21, wherein the surfactant is selected from the group consisting of fatty acids and their salts. ### Claim 23 (depends on 12) The slurry system of claim 12, wherein the elastomeric polymer outer surface surrounds a core comprising an inorganic material. ### Claim 24 A slurry system for an improved low-K oxide/copper chemical mechanical polishing (CMP) process to reduce copper damascene sidewall erosion comprising: an alkaline aqueous dispersion comprising abrasive particles, said abrasive particles consisting essentially of particles comprising a first material having an elastomeric polymer outer surface, said first material surrounding a core comprising a second material, said second material different from said first material, said abrasive particles in said alkaline aqueous dispersion capable of exhibiting elastic behavior during the CMP process, said elastomeric polymer only on said particles in said alkaline aqueous dispersion; wherein said alkaline aqueous dispersion has a pH of between about 7.0 and about 10.0, and, wherein said alkaline aqueous dispersion has a solids content of said particles of between about 0.5 and about 6.5 weight percent of the total weight of the aqueous dispersion. ### Claim 25 (depends on 24) The slurry system of claim 24, wherein the particles comprise a thermoplastic material. ### Claim 26 (depends on 24) The slurry system of claim 24, wherein the elastomeric polymer outer surface comprises a material selected from the group consisting of polyurethanes, neoprenes, silicones, fluorosilicones, fluorocarbon polymers, polysulfones, acrylic resins, polyacetals, saturated polyesters, polyamides, polyimides, polypropylenes, phenol resins, urea resins, melamine resins, and epoxy resins. ### Claim 27 (depends on 24) The slurry system of claim 24, wherein the abrasive particles comprise an elastomeric polymer coating over a metal oxide. ### Claim 28 (depends on 24) The slurry system of claim 24, wherein the abrasive particles have a mean particle diameter of from about 20 nanometers to about 500 nanometers. ### Claim 29 (depends on 24) The slurry system of claim 24, wherein the slurry system further comprises an additive selected from the group consisting of ammonium hydroxide (NH4OH), ammonia (NH3), and tetra methyl ammonium hydroxide (TMAH). ### Claim 30 (depends on 24) The slurry system of claim 24, further comprising a surfactant selected from the group consisting of fatty acids and their salts. ### Claim 31 (depends on 24) The slurry system of claim 24, further comprising a surfactant at about 0.01 weight percent to about 0.5 weight percent. ### Claim 32 (depends on 31) The slurry system of claim 31, wherein the surfactant is selected from the group consisting of fatty acids and their salts. ### Claim 33 (depends on 24) The slurry system of claim 24, wherein the elastomeric polymer outer surface surrounds a core comprising an inorganic material.