# US 7,407,565 B2 · Method and apparatus for ionized plasma deposition > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 7,407,565 B2 - Document ID: US7407565B2 - Status: Granted - Kind: B2 - Application number: 10/646,405 - Filed: 2003-08-22 - Published: 2004-02-19 - Granted: 2008-08-05 - Earliest claimed: 2000-02-16 - Assignees: Applied Materials, Inc. - Inventors: Wei Wang; James Van Gogh - Web page: https://patentgrep.com/patent/US7407565B2 ## CPC - H10W 20/033: {in openings in dielectrics} - H01J 37/32082: {Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence)} - H01J 37/3244: {Gas supply means} - H01J 37/34: operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) - H10P 14/44: Physical vapour deposition [PVD] - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A system for performing PVD of metallic nitride(s) is disclosed. The improved performance is provided by a method of increasing the partial pressures of nitrogen or other active gases near the wafer surface through initial introduction of the argon or other neutral gases alone into an ionized metal plasma PVD chamber through an upper gas inlet at or near the target, initiating the plasma in the presence of argon or other neutral gases alone, after which nitrogen or other active gases are introduced into the chamber through a lower gas inlet at or near the wafer surface to increase deposition rates and lower electrical resistivity of the deposited metallic layer. An apparatus for carrying out the invention includes a source of argon near the target surface and a source of nitrogen integral to the substrate support thereby delivering nitrogen near the substrate surface. ## Claims ### Claim 1 A method of depositing metallic film layers on a substrate, comprising: introducing a first gas into a vacuum chamber wherein the first gas is introduced through an first inlet port disposed proximate a sputtering target disposed inside the vacuum chamber, wherein the sputtering target is made of a material selected from a group consisting of titanium, tantalum and tungsten; applying power to the sputtering target and a coil disposed between the sputtering target and the substrate positioned on a substrate support member in the presence of only the first gas; and introducing a second gas into the chamber to deposit the metal containing film layers, wherein the second gas is introduced from a bottom portion of the vacuum chamber proximate a surface of the substrate in the presence of the power applied to the sputter target and the coil, wherein the second gas from the bottom portion of the vacuum chamber is supplied through a gap defined between a shield ring and a shield support member to the substrate surface. ### Claim 2 (depends on 1) The method of claim 1, further comprising biasing the substrate and the coil. ### Claim 3 (depends on 1) The method of claim 1, wherein the second gas is introduced proximate an upper surface of the substrate. ### Claim 4 (depends on 1) The method of claim 1, wherein the power is applied to the sputtering target and the coil to initiate plasma. ### Claim 5 (depends on 1) The method of claim 1, wherein the first gas is introduced to encourage gas stabilization. ### Claim 6 (depends on 1) The method of claim 1, wherein the power is applied to the sputtering target and the coil following a controlled power ramp process. ### Claim 7 (depends on 1) The method of claim 1, wherein the first gas is argon. ### Claim 8 (depends on 1) The method of claim 1, wherein the second gas is nitrogen. ### Claim 9 (depends on 1) The method of claim 1, wherein the first gas is inert. ### Claim 10 (depends on 1) The method of claim 1, wherein the second gas is active. ### Claim 11 (depends on 1) The method of claim 1, wherein the second gas is introduced after the power is applied to the sputtering target and the coil. ### Claim 12 (depends on 1) The method of claim 1, wherein the coil is made of a material selected from a group consisting of titanium, tantalum and tungsten. ### Claim 13 (depends on 1) The method of claim 1, wherein introducing the first gas into the vacuum chamber wherein the first gas is introduced proximate the sputtering target comprises creating a higher partial pressure of the first gas proximate the sputtering target than at the upper surface of the substrate. ### Claim 14 (depends on 1) The method of claim 1, wherein introducing the second gas into the chamber wherein the second gas is introduced proximate the upper surface of the substrate comprises creating a higher partial pressure of the second gas proximate the upper surface of the substrate than at the sputtering target. ### Claim 15 (depends on 1) The method of claim 1, wherein the shield ring, the shield support member and the substrate support member are disposed inside the vacuum chamber. ### Claim 16 A method of depositing metallic film layers on a substrate, comprising: creating a higher partial pressure of an inert gas inside a vacuum chamber through a first inlet port disposed proximate a sputtering target disposed therein than at an upper surface of the substrate positioned on a substrate support member disposed in the vacuum chamber; initiating a plasma within the chamber by applying a power to the sputter target and a coil disposed between the sputtering target and the substrate; and creating a higher partial pressure of an active gas introduced through a bottom portion of the vacuum chamber proximate the upper surface of the substrate than at the sputtering target to deposit the metal containing film layers in the presence of the power applied to the sputter target and the coil, wherein the active gas from the bottom portion of the vacuum chamber is supplied through a gap defined between a shield ring and a shield support member to the substrate surface. ### Claim 17 (depends on 16) The method of claim 16, further comprising biasing a coil and the substrate, wherein the coil is disposed between the sputtering target and the substrate. ### Claim 18 (depends on 17) The method of claim 17, wherein the coil is made of a material selected from a group consisting of titanium, tantalum and tungsten. ### Claim 19 (depends on 17) The method of claim 17, wherein initiating the plasma comprises applying power to the sputtering target and the coil in the presence of only the inert gas. ### Claim 20 (depends on 16) The method of claim 16, wherein the inert gas is argon and the active gas is nitrogen. ### Claim 21 (depends on 16) The method of claim 16, wherein the sputtering target is made of a material selected from a group consisting of titanium, tantalum and tungsten. ### Claim 22 (depends on 16) The method of claim 16, wherein the shield ring, the shield support member and the substrate support member are disposed inside the vacuum chamber. ### Claim 23 A method of depositing metallic film layers on a substrate comprising: creating a higher partial pressure of argon inside a vacuum chamber through a first inlet port disposed proximate a sputtering target disposed therein than at an upper surface of the substrate positioned on a substrate support member disposed in the vacuum chamber, wherein the sputtering target is made of a material selected from a group consisting of titanium, tantalum and tungsten; applying power to the sputtering target and a coil disposed between the sputtering target and the substrate, wherein the coil is made of a material selected from a group consisting of titanium, tantalum and tungsten; creating a higher partial pressure of nitrogen through a bottom portion of the vacuum chamber proximate the upper surface of the substrate than at the sputtering target to deposit the metal containing film layers in the presence of the power applied to the sputter target and the coil, wherein the nitrogen from the bottom portion of the vacuum chamber is supplied through an annular gap defined between a shield ring and a shield support member to the substrate surface; and biasing the coil and the substrate. ### Claim 24 A method of depositing metallic film layers on a substrate, comprising: introducing a gas mixture into a vacuum chamber through a first inlet port disposed proximate a sputtering target disposed inside the vacuum chamber; creating a higher partial pressure of an inert gas inside the vacuum chamber proximate the sputtering target disposed therein than at an upper surface of the substrate positioned on a substrate support member; applying power to the sputtering target and a coil disposed between the sputtering target and the substrate; and introducing a second gas into the chamber through a bottom portion of the vacuum chamber proximate the upper surface of the substrate to deposit the metal containing film layers in the presence of the power applied to the sputter target and the coil, wherein the second gas from the bottom portion of the vacuum chamber is supplied through an annular gap defined between a shield ring and a shield support member to the substrate surface. ### Claim 25 (depends on 24) The method of claim 24, wherein the gas mixture comprises argon and nitrogen, and the second gas comprises nitrogen. ### Claim 26 (depends on 24) The method of claim 24, further comprising biasing the substrate and the coil. ### Claim 27 (depends on 24) The method of claim 24, wherein the coil is made of a material selected from a group consisting of titanium, tantalum and tungsten. ### Claim 28 (depends on 24) The method of claim 24, wherein the sputtering target is made of a material selected from a group consisting of titanium, tantalum, and tungsten.