# US 7,407,421 B2 · Light source, optical pickup, and electronic apparatus

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- Number: US 7,407,421 B2
- Document ID: US7407421B2
- Status: Granted
- Kind: B2
- Application number: 10/993,812
- Filed: 2004-11-19
- Published: 2005-06-02
- Granted: 2008-08-05
- Earliest claimed: 2003-11-20
- Assignees: Matsushita Electric Industrial Co., Ltd.
- Inventors: Isao Kidoguchi; Yasuo Kitaoka; Hiroyoshi Yajima; Keiji Ito; Akihiko Ishibashi; Yoshiaki Hasegawa; Kiminori Mizuuchi
- Web page: https://patentgrep.com/patent/US7407421B2

## CPC

- H01S 5/02235: Getter material for absorbing contamination
- H01S 5/02212: Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
- H01S 5/02257: using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device.

## Claims

### Claim 1

A fabrication method of a light source comprising the steps of:
providing a semiconductor light emitting device which has a light emitting face and emits light from a part of the light emitting face;
providing a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device;
accommodating the semiconductor light emitting device in the container, thereby blocking the semiconductor light emitting device from the air; and
performing gettering of a material containing at least one of carbon and silicon, by irradiating with light a region that is positioned in the container, and the region being positioned other than the part of the light emitting face of the semiconductor light emitting device.

### Claim 2 (depends on 1)

The fabrication method of claim 1, wherein a wavelength of light with which the irradiation is performed in the gettering step is 450 nm or less.

### Claim 3 (depends on 2)

The fabrication method of claim 2, wherein the irradiation with light is performed by using one of an Hg lamp, a blue LED, a blue laser, an ultraviolet LED, and an ultraviolet laser.

### Claim 4 (depends on 1)

The fabrication method of claim 1, wherein the semiconductor light emitting device is formed from a III-V group nitride semiconductor material.

### Claim 5 (depends on 1)

The fabrication method of claim 1, wherein the material containing the at least one of carbon and silicon is included in an atmosphere in the container.

### Claim 6 (depends on 1)

The method of claim 1, wherein the semiconductor light emitting device includes:
a substrate;
a multilayer structure including a first conductive-type cladding layer, an active layer, and a second conductive-type cladding layer, the multilayer structure being formed on the substrate;
a main current confinement structure for injecting a carrier into a first region of the active layer; and
a sub current confinement structure for injecting a carrier into a second region of the active layer, wherein the step of performing gettering includes irradiating the region with light from the second region of the active layer.

### Claim 7 (depends on 1)

The method of claim 1, wherein the step of performing gettering includes irradiating the region with light from the outside of the container.